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BA33D18HFP-TL

更新时间： 2024-01-17 05:35:06
品牌 Logo 应用领域
罗姆 - ROHM 线性稳压器IC调节器电源电路输出元件
页数 文件大小 规格书
9页 303K
描述
Regulator, 2 Output, BIPolar,

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BA33D18HFP-TL 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：MODULE
包装说明：, SMSIP5H,.41,67TB针数：5
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：7.98
Is Samacsys：N可调性：FIXED
最大回动电压 1：0.5 V标称回动电压 1：0.25 V
最大回动电压 2：0.5 V最大绝对输入电压：18 V
最大输入电压：16 V最小输入电压：4.1 V
JESD-30 代码：R-PSSO-G5长度：9.395 mm
最大电网调整率：0.03%最大负载调整率：0.075%
功能数量：1输出次数：2
端子数量：5工作温度TJ-Max：125 °C
工作温度TJ-Min：最大输出电流 1：0.25 A
最大输出电流 2：0.25 A最大输出电压 1：3.366 V
最小输出电压 1：3.234 V标称输出电压 1：3.3 V
最大输出电压 2：1.836 V最小输出电压 2：1.764 V
标称输出电压 2：1.8 V封装主体材料：PLASTIC/EPOXY
封装等效代码：SMSIP5H,.41,67TB封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG包装方法：TAPE AND REEL
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
调节器类型：FIXED POSITIVE MULTIPLE OUTPUT LDO REGULATOR座面最大高度：2.005 mm
子类别：Other Regulators表面贴装：YES
技术：BIPOLAR端子形式：GULL WING
端子节距：1.72 mm端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：2%
宽度：8 mmBase Number Matches：1

BA33D18HFP-TL 数据手册

 浏览型号BA33D18HFP-TL的Datasheet PDF文件第3页浏览型号BA33D18HFP-TL的Datasheet PDF文件第4页浏览型号BA33D18HFP-TL的Datasheet PDF文件第5页浏览型号BA33D18HFP-TL的Datasheet PDF文件第7页浏览型号BA33D18HFP-TL的Datasheet PDF文件第8页浏览型号BA33D18HFP-TL的Datasheet PDF文件第9页 
Technical Note  
BA3258HFP,BA33D15HFP,BA33D18HFP  
●Thermal Design  
If the IC is used under excessive power dissipation conditions, the chip temperature will rise, which will have an adverse  
effect on the electrical characteristics of the IC, such as a reduction in current capability. Furthermore, if the temperature  
exceeds Tjmax, element deterioration or damage may occur. Implement proper thermal designs to ensure that the power  
dissipation is within the permissible range in order to prevent instantaneous IC damage resulting from heat and maintain the  
reliability of the IC for long-term operation. Refer to the power derating characteristics curves in Fig. 29.  
・Power Consumption (Pc) Calculation Method  
*Vcc: Applied voltage  
Vcc  
IP  
Vcc  
Io1: Load current on Vo1 side  
Io2: Load current on Vo2 side  
3.3 V output  
IO1  
・Power consumption of 3.3V power transistor:  
Pc1 = (Vcc − 3.3) Io1  
・Power consumption of Vo2 power transistor:  
Pc2 = (Vcc − Vo2) Io2  
・Power consumption due to circuit current:  
Pc3 = Vcc Icc  
Power Tr  
Power Tr  
Vo1  
Icc: Circuit current  
Controller  
Vcc  
* The Icc (circuit current) varies with the load.  
(See reference data in Figs. 2, 3, 14, and 15.)  
IO2  
Vo2  
Icc  
1.5 V output or  
1.8 V output  
GND  
→Pc = Pc1 + Pc2 + Pc3  
Refer to the above and implement proper thermal designs so that the IC will not be used under excessive power dissipation  
conditions under the entire operating temperature range.  
・Calculation example (BA33D15HFP)  
Example: Vcc = 5V, Io1 = 200mA, and Io2 = 100mA  
・Power consumption of 3.3V power transistor:  
・Power consumption of 1.5V power transistor:  
Pc1 = (Vcc − 3.3) Io1 = (5 − 3.3) 0.2 = 0.34W  
Pc2 = (Vcc − 1.5) Io2 = (5 − 1.5) 0.2 = 0.35W  
・Power consumption due to circuit current: Pc3 = Vcc Icc = 5 0.0085 = 0.0425 (W) (See Figs. 14 and 15)  
Implement proper thermal designs taking into consideration the dissipation at full power consumption  
(i.e., Pc1 + Pc2 + Pc3 = 0.34 + 0.35 + 0.0425 = 0.7325W).  
●Explanation of External Components  
○BA3258HFP  
1) Pin 1 (Vcc pin)  
Connecting a ceramic capacitor with a capacitance of approximately 3.3F between Vcc and GND as close to the pins  
as possible is recommended.  
2) Pins 4 and 5 (Vo pins)  
Insert a capacitor between the Vo and GND pins in order to prevent output oscillation. The capacitor may oscillate if  
the capacitance changes as a result of temperature fluctuations. Therefore, it is recommended that a ceramic  
capacitor with a temperature coefficient of X5R or above and a maximum capacitance change (resulting from  
temperature fluctuations) of 10% be used. The capacitance should be between 1F and 1,000µF. (Refer to Fig. 30)  
○BA33D□□Series  
1) Pin 1 (Vcc pin)  
Insert a 1F capacitor between Vcc and GND. The capacitance will vary depending on the application. Check the  
capacitance with the application set and implement designing with a sufficient margin.  
2) Pins 4 and 5 (Vo pins)  
Insert a capacitor between the Vo and GND pins in order to prevent oscillation. The capacitance may vary greatly with  
temperature changes, thus making it impossible to completely prevent oscillation. Therefore, use a tantalum aluminum  
electrolytic capacitor with a low ESR (Equivalent Serial Resistance). The output will oscillate if the ESR is too high or too  
low, so refer to the ESR characteristcs in Fig. 31 and operate the IC within the stable operating region. If there is a  
sudden load change, use a capacitor with higher capacitance. A capacitance between 10F and 1,000F is  
recommended.  
Board size: 70 mm 70 1.6 mm (with a thermal via incorporated by the board)  
10  
10.0  
5.0  
10.0  
5.0  
4.0  
2.0  
Board surface area: 10.5 mm 10.5 mm  
Unstable region  
9
8
(1) 2-layer board (Backside copper foil area: 15 mm 15mm)  
(2) 2-layer board (Backside copper foil area: 70 mm 70 mm)  
(3) 4-layer board (Backside copper foil area: 70 mm 70mm)  
(3) 7.3 W  
(2) 5.5 W  
Unstable region  
2.0  
1.0  
7
6
5
1.0  
Stable region  
0.5  
0.2  
0.5  
0.2  
0.15  
0.1  
4
3
2
1
0
Stable region  
(1) 2.3 W  
0.1  
0.05  
0.05  
Unstable region  
0.02  
0.01  
0.02  
0.01  
0
25  
50  
75  
100 125 150  
0
200  
400 600  
Io [mA]  
800 1000  
0
200  
400 600  
Io [mA]  
800 1000  
AMBIENT TEMPERATURE：Ta［℃］  
Fig. 29 Thermal Derating Curves  
Fig. 30 BA3258HFP ESR characteristics  
Fig. 31 BA33D□□Series ESR  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
6/8  
2011.03 - Rev.B  
1...3456789

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