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BA159GP-AP PDF预览

BA159GP-AP

更新时间: 2024-10-02 13:05:51
品牌 Logo 应用领域
美微科 - MCC 整流二极管IOT
页数 文件大小 规格书
3页 364K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

BA159GP-AP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-41
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.12
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.25 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BA159GP-AP 数据手册

 浏览型号BA159GP-AP的Datasheet PDF文件第2页浏览型号BA159GP-AP的Datasheet PDF文件第3页 
M C C  
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6047  
TM  
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20736 Marilla Street Chatsworth  
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Micro Commercial Components  
*)ꢀ#'  
Features  
·
Low Leakage Current  
1 Amp Fast Recovery  
Rectifier  
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
Fast Switching For High Efficiency  
400~1000 Volts  
High emperature soldering guaranteed:260oC /10 seconds  
Lead Free Finish/RoHS Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
DO-41  
Maximum Ratings  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +125°C  
Maximum Thermal Resistance; 25°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
400V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
D
BA157  
BA158  
BA159  
BA157  
BA158  
BA159  
280V  
420V  
700V  
400V  
600V  
1000V  
A
600V  
1000V  
Cathode  
Mark  
B
Electrical Characteristics @ 25°C Unless Otherwise Specified  
D
Average Forward  
Current  
IF(AV)  
1.0A  
TA =50°C  
Peak Forward Surge  
Current  
IFSM  
35A  
8.3ms, half sine  
C
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.3V  
IFM = 1.0A;  
TA = 25°C*  
5.0µA  
TJ = 25°C  
DIMENSIONS  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
4.10  
2.00  
.70  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
Maximum Reverse  
Recovery Time  
Trr  
CJ  
150nS  
250nS  
IF=0.5A,  
BA157~BA158  
BA159  
1.000  
25.40  
---  
IR=1.0A,  
Irr=0.25A  
Measured at  
1.0MHz,  
VR=4.0V  
Typical Junction  
Capacitance  
15pF  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
Note: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

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