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BA157G PDF预览

BA157G

更新时间: 2024-02-22 20:10:38
品牌 Logo 应用领域
辰达行 - MDD 二极管
页数 文件大小 规格书
2页 74K
描述
Reverse Voltage - 400 to 1000 Volts Forward Current - 1.0 Ampere

BA157G 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.61其他特性:FORMED LEAD OPTIONS ARE AVAILABLE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.15 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BA157G 数据手册

 浏览型号BA157G的Datasheet PDF文件第1页 
RATINGS AND CHARACTERISTIC CURVES BA157G THRU BA159G  
FIG. 1- FORWARD CURRENT DERATING CURVE  
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
30  
25  
20  
15  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Single Phase  
Half Wave 60Hz  
Resistive or  
inductive Load  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
10  
0
25  
50  
75  
100  
125  
150  
175  
5.0  
1
10  
100  
AMBIENT TEMPERATURE, C  
NUMBER OF CYCLES AT 60 Hz  
FIG. 3-TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG. 4-TYPICAL REVERSE CHARACTERISTICS  
1,000  
100  
10  
20  
10  
1
0.1  
TJ=100 C  
1
TJ=25 C  
PULSE WIDTH=300 µs  
1%DUTY CYCLE  
0.1  
0.01  
0.01  
TJ=25 C  
0.6  
0.8  
1.0  
1.2  
1.4  
1.5  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF PEAK REVERSE VOLTAGE,%  
FIG. 5-TYPICAL JUNCTION CAPACITANCE  
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE  
200  
100  
100  
10  
1
TJ=25 C  
10  
0.1  
0.01  
0.1  
1
10  
100  
1
0.1  
1.0  
10  
100  
REVERSE VOLTAGE,VOLTS  
t,PULSE DURATION,sec.  
MDD ELECTRONIC  

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