Datasheet > B772

B772

更新时间： 2024-09-30 08:46:43

品牌	Logo	应用领域
DAYA		晶体晶体管
页数	文件大小	规格书
2页	198K
描述
SOT - 8 9 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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B772 数据手册

SOT-89 Plastic-Encapsulate Transistors

B772 TRANSISTOR（PNP）

SOT-89

1. ^BASE

1 2 3

FEATURES

Low speed switching

2. ^COLLETOR

3. EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-40

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-3

P_C

0.5

℃

T_j

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

-40

-30

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-100μA ,I_E=0

I_C= -10mA , I_B=0

I_E= -100μA,I_C=0

V_CB= -40V, I_E=0

V_CE=-30V, I_B=0

V_EB=-6V, I_C=0

-1

-10

-1

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE= -2V, I_C= -1A

I_C=-2A, I_B= -0.2A

400

-0.5

Collector-emitter saturation voltage

V_CE(sat)

Base-emitter saturation voltage

V_BE(sat)

I_C=-2A, I_B= -0.2A

-1.5

V_CE= -5V, I_C=-0.1A

f =10MHz

Transition frequency

f_T

MHz

CLASSIFICATION OF hFE

Rank

Range

60-120

100-200

160-320

200-400

中文翻译

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