Datasheet > B500C800-LF

B500C800-LF

更新时间： 2024-09-21 21:12:31

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
4页	53K
描述
Bridge Rectifier Diode, 1 Phase, 0.8A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, WOB, 4 PIN

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B500C800-LF 数据手册

WTE

POWER SEMICONDUCTORS

B40C800 – B500C800

0.8A SINGLE-PHASE BRIDGE RECTIFIER

Features



Diffused Junction



Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Excellent Case Dielectric Strength

WOB

Min

Dim

Max

9.10

5.50

—

8.60

5.00

21.90

19.00

0.69

Mechanical Data



—

Case: WOB, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

0.80

5.60

4.60

All Dimensions in mm



Polarity: As Marked on Body

Weight: 1.1 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

B40C

800

B80C B125C B250C B380C B500C

Characteristic

Symbol

Unit

800

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

200

300

600

900

1200

Input Voltage Recommended

VR(RMS)

125

250

380

500

Average Rectified Output Current (Note 1) @T_A= 50°C

0.8

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

Forward Voltage (per element)

@I_F= 0.8A

VFM

IRM

1.0

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

5.0

500

µA

Operating Temperature Range

Storage Temperature Range

-55 to +125

-55 to +150

°C

TSTG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

B40C800 – B500C800

1 of 4

12 3 4

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