Datasheet > B120-M3/5AT

B120-M3/5AT

更新时间： 2022-09-29 11:47:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	110K
描述
DIODE SCHOTTKY 20V 1A DO214AC

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中文翻译

获取价格

数据手册
替代型号

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B120-M3/5AT 数据手册

B120-M3, B130-M3, B140-M3, B150-M3, B160-M3

www.vishay.com

Vishay General Semiconductor

Axis Title

10000

T_J= 150 °C

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

B150 and B160

D = 0.8

D = 0.5

D = 0.3

D = 0.2

D = 0.1

1000

D = 1.0

T_J= 125 °C

T_J= 25 °C

100

0.1

0.01

T_J= -40 °C

D = t_p/T

t_p

1.0

B150, B160

0.2

0.4

0.6

0.8

1.2

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Average Forward Current (A)

Instantaneous Forward Voltage (V)

Fig. 3 - Forward Power Loss Characteristics

Fig. 6 - Typical Instantaneous Forward Characteristics

100 000

10 000

1000

100

10000

1000

100

T_J= 150 °C

T_J= 125 °C

T_J= 25 °C

0.1

T_J= -40 °C

0.01

0.001

100

10 20 30 40 50 60 70 80 90 100

Percent of Rated Peak Reverse Voltage (%)

Number of Cycles at 50 Hz

Fig. 4 - Typical Instantaneous Forward Characteristics

Fig. 7 - Typical Reverse Leakage Characteristics

Axis Title

1000

10000

1000

100

T_J= 150 °C

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_J= 125 °C

100

T_J= 25 °C

T_J= -40 °C

0.1

0.01

B120 thru B140

B150 and B160

B120, B130, B140

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Fig. 5 - Typical Instantaneous Forward Characteristics

Fig. 8 - Typical Junction Capacitance

Revision: 10-Dec-2020

Document Number: 89926

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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B120-M3/5AT 替代型号

型号	品牌	替代类型	描述	数据表
B120-M3/61T	VISHAY	完全替代	DIODE SCHOTTKY 20V 1A DO214AC

与B120-M3/5AT相关器件

型号	品牌	获取价格	描述	数据表
B120-M3/61T	VISHAY	获取价格	DIODE SCHOTTKY 20V 1A DO214AC
B120-M3_15	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier
B120N	WEITRON	获取价格	Surface Mount Schottky Barrier Diodes
B120N_09	WEITRON	获取价格	Surface Mount Schottky Barrier Diodes
B120NF10	STMICROELECTRONICS	获取价格	N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET
B120N-G	WEITRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),
B120NH03L	STMICROELECTRONICS	获取价格	N-channel 30V - 0.005ohm - 60A - TO-220 / D2PAK / I2PAK STripFET Power MOSFET for DC-DC co
B120Q	DIODES	获取价格	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
B120SL	PACELEADER	获取价格	LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
B120T-01LC	DIODES	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),