Datasheet > B10H0608N40D

B10H0608N40D

更新时间： 2024-09-22 17:15:43

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
14页	1709K
描述
LDMOS 2-stage integrated Doherty MMIC

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B10H0608N40D 数据手册

B10H0608N40D

LDMOS 2-stage integrated Doherty MMIC

Rev. 1 — 26 February 2024

Product data sheet

1. Product profile

1.1 General description

The B10H0608N40D is a dual section 2-stage fully integrated Doherty MMIC solution

using Ampleon's state of the art 50 V LDMOS technology. The carrier and peaking device,

input splitter, output combiner and pre-match are integrated in each section. This

multiband device is perfectly suited as general purpose driver in the frequency range

600 MHz to 800 MHz. Available in a 12 mm  8 mm LGA outline.

Table 1.

Application performance

Typical RF performance at T_case= 25 C; I_Dq= 71 mA; V_GSq(peaking)= V_GSq(carrier) 0.55 V. Test

signal: 1-carrier LTE 20 MHz measured in an Ampleon quad-combined application circuit at

f = 681.5 MHz.

Test signal

V_DSP_L(AV)

G_p

_D

(MHz)

681.5

(V)

(W)

(dBm)

(dB) (%)

1-carrier LTE 20 MHz PAR = 7.6 dB

1.2 Features and benefits

2.512

29.9 28.9

 Integrated input splitter

 Integrated output combiner

 Source impedance 50 

 Pre-matched output

 No output circulator needed thanks to quad-combined configuration

 High linearity

 Designed for large RF and instantaneous bandwidth operation

 Independent control of carrier and peaking bias

 Integrated ESD protection

 High power gain

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 4G/5G macrocell base station driver

 4G/5G microcell base station

12 3 4 5 6 7...14

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