5秒后页面跳转
B10S PDF预览

B10S

更新时间: 2024-09-21 06:39:11
品牌 Logo 应用领域
DIOTECH 二极管
页数 文件大小 规格书
2页 812K
描述
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER

B10S 数据手册

 浏览型号B10S的Datasheet PDF文件第2页 
B1S THRU B10S  
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER  
Reverse Voltage - 100 to 1000 Volts  
Forward Current - 0.8 Ampere  
FEATURES  
MBS  
Surge overload rating - 30 Amperes peak  
Ideal for printed circuit board  
.275(7.0)MAX  
.067(1.7)  
.057(1.3)  
.051(1.3)  
.035(0.9)  
Reliable low cost construction utilizing molded  
Glass passivated device  
.165(4.2)  
.150(3.8)  
Polarity symbols molded on body  
.014(.35)  
.006(.15)  
.043(1.1)  
.027(0.7)  
.031(0.8)  
.019(0.5)  
.106(2.7)  
.09(2.3)  
.067(1.7)  
.057(1.3)  
.193(4.9)  
.177(4.5)  
MECHANICAL DATA  
.106(2.7)  
.09(2.3)  
Case : MBS, Molded Plastic  
1
2
3
4
Epoxy : Device has UL flammability classification 94V-0  
Mounting Position : Any  
Weight : 0.22 grams (approx.)  
Marking : Type Number  
.008(0.2)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
Characteristic  
Symbol  
B1S  
B2S  
B4S  
B6S  
B8S  
B10S  
Unit  
RRM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RWM  
100  
70  
200  
140  
400  
280  
600  
420  
800  
560  
1000  
700  
V
R
V
R(RMS)  
RMS Reverse Voltage  
V
V
A
Average Rectified Output Current (Note 1) @TA = 40°C  
0.8  
30  
O
I
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
FSM  
I
A
I2t Rating for Fusing (t < 8.3ms)  
I2t  
2s  
A
10  
FM  
Forward Voltage per element  
@IF = 0.8A  
V
1.1  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
500  
RM  
I
µA  
pF  
j
Typical Junction Capacitance per leg (Note 2)  
Typical Thermal Resistance per leg (Note 1)  
Operating and Storage Temperature Range  
C
25  
JA  
JL  
R
R
85  
20  
°C/W  
°C  
j
STG  
T, T  
-55 to +150  
Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  

与B10S相关器件

型号 品牌 获取价格 描述 数据表
B10S-G COMCHIP

获取价格

Silicon General Purpose Bridge Rectifier
B10SGS COMCHIP

获取价格

SMD Genenal Purpose Bridge Rectifier
B10S-HF COMCHIP

获取价格

SMD General Purpose Bridge Rectifier Diode
B10SS LRC

获取价格

High Current Glass Passivated Molding Single-Phase Bridge Rectifier
B10S-T3 WTE

获取价格

0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
B10S-T3-LF WTE

获取价格

Bridge Rectifier Diode, 1 Phase, 0.5A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MB-
B10T COILCRAFT

获取价格

Mini Spring? Air Core Inductors
B10T-2 COILCRAFT

获取价格

General Purpose Inductor, 0.043uH, 2%, 1 Element, Air-Core, SMD
B10T-5 COILCRAFT

获取价格

General Purpose Inductor, 0.043uH, 5%, 1 Element, Air-Core, SMD,
B10TFLB COILCRAFT

获取价格

Mini Spring Air Core Inductors