Datasheet > B10G3438N55D

B10G3438N55D

更新时间： 2024-11-20 17:15:27

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
13页	1101K
描述
LDMOS 3-stage integrated Doherty MMIC

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B10G3438N55D 数据手册

B10G3438N55D

LDMOS 3-stage integrated Doherty MMIC

Rev. 1 — 5 October 2021

Product data sheet

1. Product profile

1.1 General description

The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution

using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking

device, input splitter, output combiner and pre-match are integrated in a single package.

This multiband device is perfectly suited as a final stage for small cells and massive MIMO

applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN

outline.

Table 1.

Application performance

Typical RF performance at T_case= 25 C; I_Dq= 73 mA (carrier and peaking);

V_GSq(peaking)= V_GSq(carrier) 0.5 V. Test signal: 1-carrier LTE 20 MHz; PAR = 7.6 dB at 0.01 %

probability CCDF; measured in an Ampleon f = 3400 MHz to 3800 MHz integrated Doherty

application circuit.

Test signal

V_DS

P_L(AV)G_p

_D

(dB) (%)

34 37

(MHz) (V)

(W)

1-carrier LTE 20 MHz (3600 MHz) PAR = 7.6 dB

1.2 Features and benefits

3600 28

7.94

 Integrated input splitter

 Integrated output combiner

 30  output impedance thanks to integrated pre-match

 Very high efficiency thanks to asymmetry

 Designed for wideband operation (frequency 3400 MHz to 3800 MHz)

 Independent control of carrier and peaking bias

 Integrated ESD protection

 Source impedance 50 ; high power gain

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base

stations in the 3400 MHz to 3800 MHz frequency range

12 3 4 5 6 7...13

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