Datasheet > AZ23C9V1-G3-18

AZ23C9V1-G3-18

更新时间： 2024-02-04 16:12:50

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	117K
描述
DIODE ZENER 9.1V 300MW SOT23

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数据手册

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AZ23C9V1-G3-18 数据手册

AZ23-G-Series

Vishay Semiconductors

www.vishay.com

TYPICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

10³

10²

10³

ΔV_Z

R_zth= R_thAx V_Zx

T_j

I_F

R_zth

T_J= 100 °C

10²

10^-1

10^-2

T_J= 25 °C

10^-3

10^-4

10^-5

negative

positive

0.2

0.4

0.6

0.8

100 V

V_F

18114

18121

V_Zat I_Z= 5 mA

Fig. 1 - Forward Characteristics

Fig. 4 - Thermal Differential Resistance vs. Zener Voltage

100

500

400

R_zj

P_tot

300

200

100

T = 25 °C

I_Z^j= 5 mA

100

200 °C

100 V

18122

18115

V_Z

T_amb

Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 5 - Dynamic Resistance vs. Zener Voltage

mV/°C

10³

T_j= 25 °C

ΔV_Z

5 mA

1 mA

20 mA

R_zj

47 + 51

I_Z=

T_j

10²

- 5

100 V

0.1

18123

V_Z

18120

I_Z

Fig. 3 - Dynamic Resistance vs. Zener Current

Fig. 6 - Temperature Dependence of Zener Voltage vs.

Zener Voltage

Rev. 1.7, 11-Dec-2019

Document Number: 85867

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 2 345 6 7 8

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