Datasheet > AXUV16ELG

AXUV16ELG

更新时间： 2022-04-19 21:20:42

品牌	Logo	应用领域
OPTODIODE		光电二极管光电二极管
页数	文件大小	规格书
2页	664K
描述
PHOTODIODE 16 ELEMENT 40 pin dual in-line package

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数据手册

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AXUV16ELG 数据手册

PHOTODIODE 16 ELEMENT

AXUV16ELG

Dimensions are in inch [metric] units.

FEATURES

• 40 pin dual in-line package

• Ideal for electron detection

• 100% internal QE

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C (Per Element)

PARAMETERS

Active Area

TEST CONDITIONS

2mm x 5mm

MIN

TYP

MAX

UNITS

mm²

Responsivity, R

(see graphs on next page)

I_R= 1µA

A/W

Volts

Reverse Breakdown Voltage, V_R

Capacitance, C

V_R= 0V

Rise Time

V_R= 0V

500

nsec

MOhms

Shunt Resistance (per element)

V_f= ±10mV

100

THERMAL PARAMETERS

STORAGE AND OPERATING TEMPERATURE RANGE

Ambient¹

-10° TO 40°C¹

-20°C TO 80°C

70°C

Nitrogen or Vacuum

Maximum Junction Temperature

Lead soldering temperature²

260°C

¹Temperatures exceeding these parameters may create oxide growth on the active area.

Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.

²0.080" from case for 10 seconds.

Shipped with temporary cover to protect photodiode and wire bond.

Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

Revision February 26, 2013

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