@vic
AV1815LT1
SOT-23 Plastic-Encapsulate Transistors
SOT— 23
1. BASE
AV1815LT1
TRANSISTOR( NPN )
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM
:
0.2
W(Tamb=25℃)
Collector current
ICM:
2.4
1.3
0.15
A
V
Collector-base voltage
V(BR)CBO : 60
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150
Unit : mm
ELECTRICAL CHARACTERISTICS(Tamb=25℃
otherwise specified)
unless
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
V
60
50
(BR)CBO
Ic= 100μA, IE=0
Ic= 0.1mA, IB=0
V
V
(BR)CEO
ICBO
ICEO
VCB=60 V , IE=0
0.1
0.1
0.1
400
0.25
1
μA
μA
μA
Collector cut-off current
VCE=50 V , IB=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
DC current gain
hFE(1)
VCE= 6V, IC= 2mA
IC=100 mA, IB= 10mA
IC=100 mA, IB= 10mA
130
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE=10V, I = 1mA
C
Transition frequency
80
MHz
fT
f=30MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
130-200
200-400
DEVICE MARKING : C1815LT1=HF
Copyright @vic Electronics Corp.
1
Website http://www.avictek.com