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AU5790D/N,112 PDF预览

AU5790D/N,112

更新时间: 2024-01-03 05:46:39
品牌 Logo 应用领域
恩智浦 - NXP 电信光电二极管电信集成电路
页数 文件大小 规格书
20页 115K
描述
IC DATACOM, INTERFACE CIRCUIT, PDSO8, PLASTIC, SO-8, Network Interface

AU5790D/N,112 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.84JESD-30 代码:R-PDSO-G8
长度:4.9 mm功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:1.75 mm标称供电电压:13 V
表面贴装:YES电信集成电路类型:INTERFACE CIRCUIT
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

AU5790D/N,112 数据手册

 浏览型号AU5790D/N,112的Datasheet PDF文件第7页浏览型号AU5790D/N,112的Datasheet PDF文件第8页浏览型号AU5790D/N,112的Datasheet PDF文件第9页浏览型号AU5790D/N,112的Datasheet PDF文件第11页浏览型号AU5790D/N,112的Datasheet PDF文件第12页浏览型号AU5790D/N,112的Datasheet PDF文件第13页 
Philips Semiconductors  
Product data  
Single wire CAN transceiver  
AU5790  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Pin TxD (continued)  
t
Transmit delay in high-speed  
mode, bus rising edge  
NSTB = 5 V, EN = 0 V;  
0.1  
1.5  
µs  
TrHS  
R = 100 , C = 15 nF;  
L
L
8 V < V  
< 16 V;  
BAT  
measured from the falling edge on  
TxD to V = 3.0 V  
CANH  
t
Transmit delay in high-speed  
mode, bus falling edge  
NSTB = 5 V, EN = 0 V;  
0.2  
3
µs  
TfHS  
R = 100 , C = 15 nF;  
L
L
8 V < V  
< 16 V;  
BAT  
measured from the rising edge on  
TxD to V = 1.0 V  
CANH  
Pin RxD  
t
t
t
t
Receive delay in normal mode,  
bus rising and falling edge  
NSTB = 5 V, EN = 5 V;  
5.5 V < V < 27 V;  
0.3  
0.3  
0.3  
10  
1
1
µs  
µs  
µs  
µs  
DN  
BAT  
CANH to RxD time measured from  
= 2.0 V to V = 2.5 V  
V
CANH  
RxD  
Receive delay in wake-up mode,  
bus rising and falling edge  
NSTB = 0 V, EN = 5 V;  
5.5 V < V < 27 V;  
DW  
DHS  
DS  
BAT  
CANH to RxD time measured from  
= 2.0 V to V = 2.5 V  
V
CANH  
RxD  
Receive delay in high-speed  
mode, bus rising and falling edge  
NSTB = 5 V, EN = 0 V;  
8 V < V < 16 V;  
1
BAT  
CANH to RxD time measured from  
= 2.0 V to V = 2.5 V  
V
CANH  
RxD  
Receive delay in sleep mode,  
bus rising edge  
NSTB = 0 V, EN = 0 V;  
CANH to RxD time, measured from  
= min {(V – 3.78 V),  
70  
V
CANH  
BAT  
7.13 V} to V  
= 2.5 V  
RxD  
NOTES:  
1. Operation at battery voltages down to 5.3 volts is guaranteed by design. Operation higher than 18 volts (18 V < V  
< 27 V) for up to two  
BAT  
minutes is permitted if the thermal design of the board prevents reaching the thermal protection temperature limit, T , otherwise the device  
sd  
will self protect. Typically these requirements will be encountered during jump start operation at T  
85 °C and V  
< 27 V. Refer to the  
amb  
BAT  
“Thermal Characteristics” section of this data sheet, or application note AN2005 for guidance.  
2. This parameter is characterized but not subject to production test.  
10  
2001 May 18  

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