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AU5790D,118 PDF预览

AU5790D,118

更新时间: 2024-01-24 00:30:40
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
20页 120K
描述
IC DATACOM, INTERFACE CIRCUIT, PDSO8, PLASTIC, SO-8, Network Interface

AU5790D,118 数据手册

 浏览型号AU5790D,118的Datasheet PDF文件第5页浏览型号AU5790D,118的Datasheet PDF文件第6页浏览型号AU5790D,118的Datasheet PDF文件第7页浏览型号AU5790D,118的Datasheet PDF文件第9页浏览型号AU5790D,118的Datasheet PDF文件第10页浏览型号AU5790D,118的Datasheet PDF文件第11页 
Philips Semiconductors  
Product data  
Single wire CAN transceiver  
AU5790  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Pin CANH (continued)  
–I  
CANHH  
Bus short circuit current in  
high-speed mode  
V
= –1 V,  
50  
190  
mA  
CANH  
TxD = 0 V; NSTB = 5 V; EN = 0 V;  
8 V < V  
< 16 V  
BAT  
I
Bus leakage current at loss of  
ground  
(I_CAN_LG = I_CANH + I_RTH)  
0 V < V  
< 16 V;  
–50  
50  
µA  
CANLG  
BAT  
see Figure 3 in the test circuits  
section  
T
T
Thermal shutdown  
Note 2  
Note 2  
155  
5
190  
15  
°C  
°C  
V
sd  
Thermal shutdown hysteresis  
Bus input threshold  
hys  
V
V
V
V
5.8 V < V  
all modes except sleep mode  
< 27 V,  
BAT  
1.8  
2.2  
T
Bus input threshold, low battery  
5.5 V < V < 5.8 V,  
1.5  
2.2  
8.1  
V
V
TL  
TS  
TSL  
BAT  
all modes except sleep mode  
Bus input threshold in sleep mode NSTB = 0 V, EN = 0 V,  
> 11.3 V  
6.15  
V
BAT  
Bus input threshold in sleep mode,  
low battery  
NSTB = 0 V, EN = 0 V,  
5.5 V < V  
V
– 4.3  
V
– 3.25  
V
BAT  
BAT  
< 11.3 V  
BAT  
Pin RTH  
V
RTH1  
V
RTH2  
Voltage on switched ground pin  
Voltage on switched ground pin  
I
I
= 1 mA  
= 6 mA  
0.1  
1
V
V
RTH  
RTH  
Pins NSTB, EN  
V
V
High level input voltage  
Low level input voltage  
Input current  
5.5 V < V  
5.5 V < V  
< 27 V  
< 27 V  
3
V
V
ih  
il  
BAT  
BAT  
1
I
i
V = 1 V and V = 5 V  
i
15  
50  
µA  
i
Pin TxD  
V
itxd  
TxD input threshold  
5.5 V < V  
< 27 V  
BAT  
1
3
V
–I  
TxD low level input current in  
normal mode  
NSTB = 5 V, EN = 5 V, V  
= 0 V  
= 5 V  
50  
180  
µA  
iltxd  
TxD  
TxD  
–I  
ihtxd  
TxD high level input current in  
sleep mode  
NSTB = 0 V, EN = 0 V, V  
–5  
10  
µA  
Pin RxD  
V
olrxd  
RxD low level output voltage  
I
= 2.2 mA;  
0.45  
V
RxD  
V
V
V
= 10 V, all modes  
CANH  
I
I
RxD low level output current  
RxD high level leakage  
= 5 V; V  
= 10 V  
3
35  
mA  
olrxd  
RxD  
RxD  
CANH  
CANH  
= 5 V; V  
= 0 V,  
–10  
+10  
µA  
ohrxd  
all modes  
NOTES:  
1. Operation at battery voltages down to 5.3 volts is guaranteed by design. Operation higher than 18 volts (18 V < V  
< 27 V) for up to two  
BAT  
minutes is permitted if the thermal design of the board prevents reaching the thermal protection temperature limit, T , otherwise the device  
sd  
will self protect. Typically these requirements will be encountered during jump start operation at T  
85 °C and V  
< 27 V. Refer to the  
amb  
BAT  
“Thermal Characteristics” section of this data sheet, or application note AN2005 for guidance.  
2. This parameter is characterized but not subject to production test.  
8
2001 May 18  

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