Datasheet > ATC100B1R3BW500XT

ATC100B1R3BW500XT

更新时间： 2022-06-24 15:43:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	389K
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RF Power LDMOS Transistor

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Document Number: A3T19H455W23S

Rev. 0, 12/2017

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 81 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications requiring very wide instantaneous

bandwidth capability covering the frequency range of 1930 to 1990 MHz.

A3T19H455W23SR6

1930–1990 MHz, 81 W AVG., 30 V

AIRFAST RF POWER LDMOS

TRANSISTOR

1900 MHz



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 30 Vdc,

I_DQA= 540 mA, V_GSB= 0.6 Vdc, P_out= 81 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

1930 MHz

1960 MHz

1990 MHz

(dB)

16.2

16.5

16.4

(%)

49.6

49.4

49.1

8.1

8.0

7.8

–31.0

–32.1

–32.6

Features

ACP--1230S--4L2S



Advanced high performance in--package Doherty

Designed for wide instantaneous bandwidth applications

Greater negative gate--source voltage range for improved Class C operation

Able to withstand extremely high output VSWR and broadband operating

conditions

(2)

VBW

Carrier

RF /V

outA DSA

inA GSA



Designed for digital predistortion error correction systems

(1)

RF /V

inB GSB

RF /V

outB DSB

Peaking

(2)

VBW

(Top View)

Figure 1. Pin Connections

1. Pin connections 4 and 5 are DC coupled

and RF independent.

2. Device can operate with

current

supplied through pin 3 and pin 6.

 2017 NXP B.V.

A3T19H455W23SR6

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...16

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