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ATA6612C-PLQW PDF预览

ATA6612C-PLQW

更新时间: 2024-01-24 19:48:05
品牌 Logo 应用领域
美国微芯 - MICROCHIP ATM异步传输模式微控制器外围集成电路
页数 文件大小 规格书
361页 9161K
描述
RISC Microcontroller

ATA6612C-PLQW 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:QCCN, LCC48,.27SQ,20Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.49位大小:8
CPU系列:AVR RISCJESD-30 代码:S-PQCC-N48
端子数量:48封装主体材料:PLASTIC/EPOXY
封装代码:QCCN封装等效代码:LCC48,.27SQ,20
封装形状:SQUARE封装形式:CHIP CARRIER
电源:5/27 V认证状态:Not Qualified
RAM(字节):1024ROM(单词):4096
ROM可编程性:FLASH筛选级别:AEC-Q100
速度:16 MHz子类别:Microcontrollers
最大压摆率:53 mA表面贴装:YES
技术:CMOS端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
uPs/uCs/外围集成电路类型:MICROCONTROLLER, RISCBase Number Matches:1

ATA6612C-PLQW 数据手册

 浏览型号ATA6612C-PLQW的Datasheet PDF文件第1页浏览型号ATA6612C-PLQW的Datasheet PDF文件第2页浏览型号ATA6612C-PLQW的Datasheet PDF文件第3页浏览型号ATA6612C-PLQW的Datasheet PDF文件第5页浏览型号ATA6612C-PLQW的Datasheet PDF文件第6页浏览型号ATA6612C-PLQW的Datasheet PDF文件第7页 
3. Absolute Maximum Ratings  
Table 3-1.  
Maximum Ratings of the SiP  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
Parameters  
Symbol  
Min.  
Typ.  
Max.  
Unit  
HBM ESD  
ANSI/ESD-STM5.1  
JESD22-A114  
AEC-Q100 (002)  
±2  
KV  
CDM ESD STM 5.3.1  
Corner pins (1, 12, 13, 24, 25, 36, 37, 48)  
All other pins  
750  
500  
V
V
Machine Model ESD AEC-Q100-Rev.F (003)  
±100  
V
ESD according to IBEE LIN EMC  
Test Spec. 1.0 following IEC 61000-4-2  
- Pin VS, LIN, KL_15 (47kΩ/100nF) to GND  
- Pin WAKE (33 kΩ serial resistor) to GND  
±6  
±5  
KV  
KV  
ESD HBM following STM5.1 with 1.5kΩ 100pF  
- Pin VS, LIN, KL_15, WAKE to GND  
±6  
KV  
Storage temperature  
Operating temperature(1)  
Ts  
–55  
–40  
+150  
+125  
°C  
°C  
Tcase  
Rthjc  
Rthja  
Thermal resistance junction to heat slug  
Thermal resistance junctiion to ambient  
Thermal shutdown of VCC regulator  
Thermal shutdown of LIN output  
Thermal shutdown hysteresis  
5
K/W  
K/W  
°C  
25  
150  
150  
165  
165  
10  
170  
170  
°C  
°C  
Note:  
1. Tcase means the temperature of the heat slug (backside). It is mandatory that this backside temperature is 125°C in the  
application.  
Table 3-2.  
Maximum Ratings of the LIN-SBC  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
Parameters  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Supply voltage VS  
VS  
–0.3  
+40  
V
Pulse time 500ms; Ta = 25°C  
Output current IVCC 85mA  
VS  
VS  
+40  
27  
V
V
Pulse time 2min; Ta = 25°C  
Output current IVCC 85mA  
WAKE (with 33kΩ serial resistor)  
KL_15 (with 47kΩ/100nF)  
DC voltage  
–1  
–150  
+40  
+100  
V
V
Transient voltage due to ISO7637 (coupling 1nF)  
INH  
- DC voltage  
–0.3  
VS + 0.3  
V
4
Atmel ATA6612C/ATA6613C  
9111K–AUTO–03/13  

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