POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - sales@poseico.com
PHASE CONTROL THYRISTOR
AT971
Repetitive voltage up to
Mean on-state current
Surge current
4200 V
3977 A
68 kA
FINAL SPECIFICATION
Feb. 17 - Issue: 2
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
V DRM
I RRM
I DRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
125
125
125
125
125
4200
4300
4200
300
V
V
V
V=VRRM
V=VDRM
mA
mA
300
CONDUCTING
I T (AV)
I T (AV)
I TSM
I² t
Mean on-state current
Mean on-state current
Surge on-state current
I² t
180° sin, 50 Hz, Th=55°C, double side cooled
180° sin, 50 Hz, Tc=85°C, double side cooled
sine wave, 10 ms
3977
3176
A
A
125
68,0
kA
without reverse voltage
23120 x1E3
2,06
A²s
V
V T
On-state voltage
On-state current =
7500 A
25
V T(TO)
r T
Threshold voltage
On-state slope resistance
125
125
1,12
V
0,125
mohm
SWITCHING
di/dt
dv/dt
td
Critical rate of rise of on-state current, min.
Critical rate of rise of off-state voltage, min.
Gate controlled delay time, typical
Circuit commutated turn-off time, typical
Reverse recovery charge
From 67% VDRM, gate 10V 5ohm
Linear ramp up to 67% of VDRM
VD=100V, gate source 10V, 10 ohm , tr=5 µs
dv/dt = 20 V/µs linear up to 75% VDRM
di/dt=-20 A/µs, I= 2150 A
125
125
25
200
A/µs
V/µs
µs
1000
.
tq
700
µs
Q RR
I RR
I H
125
.
µC
A
Peak reverse recovery current
Holding current, typical
VR= 50 V
.
VD=5V, gate open circuit
25
25
500
1500
mA
mA
I L
Latching current, typical
VD=12V, tp=50µs
GATE
V GT
Gate trigger voltage
VD=12V
25
25
3,5
250
0,25
10
V
mA
V
I GT
Gate trigger current
VD=12V
V GD
V FGM
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
VD=67%VDRM
125
V
I
FGM
10
A
V RGM
P GM
P G
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
10
V
Pulse width 100 µs
150
3
W
W
MOUNTING
R th(j-c)
Thermal impedance, DC
Junction to case, double side cooled
Case to heatsink, double side cooled
6,0
1,5
°C/kW
°C/kW
R th(c-h)
Thermal impedance
T j
F
Operating junction temperature
Mounting force
-30 / 125
80.0 / 100.0
3000
°C
kN
g
Mass
ORDERING INFORMATION : AT971 S 42
VDRM&VRRM/100
standard specification
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