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AT49BV320DT PDF预览

AT49BV320DT

更新时间: 2024-02-01 10:32:25
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
33页 519K
描述
32-megabit (2M x 16) 3-volt Only Flash Memory

AT49BV320DT 数据手册

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Features  
Single Voltage Read/Write Operation: 2.65V to 3.6V  
Access Time – 70 ns  
Sector Erase Architecture  
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout  
Fast Word Program Time – 10 µs  
Fast Sector Erase Time – 100 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase  
of a Different Sector  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
Low-power Operation  
32-megabit  
(2M x 16)  
3-volt Only  
Flash Memory  
– 10 mA Active  
– 15 µA Standby  
VPP Pin for Write Protection and Accelerated Program Operation  
WP Pin for Sector Protection  
RESET Input for Device Initialization  
Flexible Sector Protection  
TSOP and CBGA Package Options  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
AT49BV320D  
AT49BV320DT  
Minimum 100,000 Erase Cycles  
Common Flash Interface (CFI)  
Green (Pb/Halide-free) Packaging  
1. Description  
The AT49BV320D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152  
words of 16 bits each. The memory is divided into 71 sectors for erase operations.  
The device is offered in a 48-lead TSOP package and a 47-ball CBGA package. The  
device has CE and OE control signals to avoid any bus contention. This device can be  
read or reprogrammed using a single power supply, making it ideally suited for in-sys-  
tem programming.  
The device powers on in the read mode. Command sequences are used to place  
the device in other operation modes such as program and erase. The device has  
the capability to protect the data in any sector (see “Flexible Sector Protection” on  
page 6).  
To increase the flexibility of the device, it contains an Erase Suspend and Program  
Suspend feature. This feature will put the erase or program on hold for any amount of  
time and let the user read data from or program data to any of the remaining sectors  
within the memory.  
The VPP pin provides data protection. When the VPP input is below 0.4V, the program  
and erase functions are inhibited. When VPP is at 1.65V or above, normal program  
and erase operations can be performed. With VPP at 10.0V, the program (Dual-word  
Program command) operation is accelerated.  
3581C–FLASH–11/05  

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