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AT49BV320DT-70CU PDF预览

AT49BV320DT-70CU

更新时间： 2024-11-19 05:07:15
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路异步传输模式ATM
页数 文件大小 规格书
33页 519K
描述
32-megabit (2M x 16) 3-volt Only Flash Memory

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中文翻译

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AT49BV320DT-70CU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：7 X 10 MM, 1 MM HEIGHT, 0.75 MM PITCH, GREEN, CBGA-47
针数：47Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.8最长访问时间：70 ns
启动块：TOP命令用户界面：YES
通用闪存接口：YES数据轮询：NO
JESD-30 代码：R-PBGA-B47JESD-609代码：e1
长度：10 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：16
湿度敏感等级：3功能数量：1
部门数/规模：8,63端子数量：47
字数：2097152 words字数代码：2000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：2MX16
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装等效代码：BGA47,6X8,30封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：3/3.3 V
编程电压：3 V认证状态：Not Qualified
座面最大高度：1 mm部门规模：4K,32K
最大待机电流：0.000025 A子类别：Flash Memories
最大压摆率：0.025 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.65 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
切换位：NO类型：NOR TYPE
宽度：7 mmBase Number Matches：1

AT49BV320DT-70CU 数据手册

 浏览型号AT49BV320DT-70CU的Datasheet PDF文件第2页浏览型号AT49BV320DT-70CU的Datasheet PDF文件第3页浏览型号AT49BV320DT-70CU的Datasheet PDF文件第4页浏览型号AT49BV320DT-70CU的Datasheet PDF文件第5页浏览型号AT49BV320DT-70CU的Datasheet PDF文件第6页浏览型号AT49BV320DT-70CU的Datasheet PDF文件第7页 
Features  
• Single Voltage Read/Write Operation: 2.65V to 3.6V  
• Access Time – 70 ns  
• Sector Erase Architecture  
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout  
• Fast Word Program Time – 10 µs  
• Fast Sector Erase Time – 100 ms  
• Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase  
of a Different Sector  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
• Low-power Operation  
32-megabit  
(2M x 16)  
3-volt Only  
Flash Memory  
– 10 mA Active  
– 15 µA Standby  
• VPP Pin for Write Protection and Accelerated Program Operation  
• WP Pin for Sector Protection  
• RESET Input for Device Initialization  
• Flexible Sector Protection  
• TSOP and CBGA Package Options  
• Top or Bottom Boot Block Configuration Available  
• 128-bit Protection Register  
AT49BV320D  
AT49BV320DT  
• Minimum 100,000 Erase Cycles  
• Common Flash Interface (CFI)  
• Green (Pb/Halide-free) Packaging  
1. Description  
The AT49BV320D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152  
words of 16 bits each. The memory is divided into 71 sectors for erase operations.  
The device is offered in a 48-lead TSOP package and a 47-ball CBGA package. The  
device has CE and OE control signals to avoid any bus contention. This device can be  
read or reprogrammed using a single power supply, making it ideally suited for in-sys-  
tem programming.  
The device powers on in the read mode. Command sequences are used to place  
the device in other operation modes such as program and erase. The device has  
the capability to protect the data in any sector (see “Flexible Sector Protection” on  
page 6).  
To increase the flexibility of the device, it contains an Erase Suspend and Program  
Suspend feature. This feature will put the erase or program on hold for any amount of  
time and let the user read data from or program data to any of the remaining sectors  
within the memory.  
The VPP pin provides data protection. When the VPP input is below 0.4V, the program  
and erase functions are inhibited. When VPP is at 1.65V or above, normal program  
and erase operations can be performed. With VPP at 10.0V, the program (Dual-word  
Program command) operation is accelerated.  
3581C–FLASH–11/05  
1234567...33

中文翻译

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