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AT49BV3218-11CI PDF预览

AT49BV3218-11CI

更新时间: 2024-02-02 20:43:16
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
25页 223K
描述
32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory

AT49BV3218-11CI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:11 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, CBGA-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.91最长访问时间:110 ns
其他特性:TOP OR BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:11 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:2.7/3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.065 mA最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.65 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:8 mmBase Number Matches:1

AT49BV3218-11CI 数据手册

 浏览型号AT49BV3218-11CI的Datasheet PDF文件第2页浏览型号AT49BV3218-11CI的Datasheet PDF文件第3页浏览型号AT49BV3218-11CI的Datasheet PDF文件第4页浏览型号AT49BV3218-11CI的Datasheet PDF文件第5页浏览型号AT49BV3218-11CI的Datasheet PDF文件第6页浏览型号AT49BV3218-11CI的Datasheet PDF文件第7页 
Features  
Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)  
Access Time – 85 ns  
Sector Erase Architecture  
– Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout  
Fast Word Program Time – 15 µs  
Fast Sector Erase Time – 200 ms  
Dual-plane Organization, Permitting Concurrent Read while Program/Erase  
Memory Plane A: Eight 4K Word and Fifteen 32K Word Sectors  
Memory Plane B: Forty-eight 32K Word Sectors  
Erase Suspend Capability  
– Supports Reading/Programming Data from Any Sector by Suspending Erase of  
Any Different Sector  
Low-power Operation  
32-megabit  
(2M x 16/4M x 8)  
3-volt Only  
– 25 mA Active  
– 10 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
RESET Input for Device Initialization  
Sector Lockdown Support  
Flash Memory  
TSOP and CBGA Package Options  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
AT49BV3218  
AT49BV3218T  
AT49LV3218  
AT49LV3218T  
Description  
The AT49BV/LV3218(T) is a 2.65- to 3.3-volt (BV)/3.0V to 3.6V (LV) 32-megabit Flash  
memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits  
each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The  
memory is divided into 71 sectors for erase operations. The device is offered in 48-  
lead TSOP and 48-ball CBGA packages. The device has CE and OE control signals to  
avoid any bus contention. This device can be read or reprogrammed using a single  
2.65V power supply, making it ideally suited for in-system programming.  
Not Recommended for  
New Designs. New  
Designs Should Use  
AT49BV/LV320(T)/321(T)  
Pin Configurations  
Pin Name  
A0 - A20  
CE  
Function  
Addresses  
Chip Enable  
OE  
Output Enable  
WE  
Write Enable  
RESET  
RDY/BUSY  
VPP  
Reset  
READY/BUSY Output  
Optional Power Supply  
I/O0 - I/O14  
I/O15 (A-1)  
BYTE  
Data Inputs/Outputs  
I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)  
Selects Byte or Word Mode  
No Connect  
NC  
Rev. 2452F–FLASH–10/02  

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