Features
• Low Voltage Operation
– 2.7V Read
– 5V Program/Erase
• Fast Read Access Time - 120 ns
• Internal Erase/Program Control
• Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 8K Words (16K bytes) Parameter Blocks
– One 104K Words (208K bytes) Main Memory Array Block
• Fast Sector Erase Time - 10 seconds
• Word-By-Word Programming - 10 µs/Word
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
2-Megabit
(128K x 16)
3-volt Only
Flash Memory
Description
The AT49BV2048 and AT49LV2048 are 3-volt, 2-megabit Flash Memories organized
as 128K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA.
(continued)
AT49BV2048
AT49LV2048
Not Recommended
for New Design
Contact Atmel to discuss
the latest design in trends
and options
Pin Configurations
Pin Name
A0 - A16
CE
Function
Addresses
Chip Enable
OE
Output Enable
Write Enable
Reset
WE
RESET
VPP
Program/Erase Power Supply
Data Inputs/Outputs
No Connect
TSOP Top View
I/O0 - I/O15
NC
Type1
A15
A14
A13
A12
A11
A10
A9
1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
2
NC
SOIC (SOP)
3
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
4
VPP
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
5
NC
NC
2
6
3
A8
7
A7
4
A9
A8
8
A6
5
A10
A11
A12
A13
A14
A15
A16
NC
NC
9
A5
6
NC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A4
7
WE
RESET
VPP
NC
A3
8
A2
9
A1
10
11
12
13
14
15
16
17
18
19
20
21
22
NC
A0
NC
CE
NC
GND
OE
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
A7
A6
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
A5
A4
A3
GND
CE
A2
Rev. 0853C–12/98
A1
A0
1