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AT49BV320-90TI PDF预览

AT49BV320-90TI

更新时间: 2024-11-19 05:07:15
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
30页 828K
描述
32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory

AT49BV320-90TI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSOP1, TSSOP48,.8,20针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.87
Is Samacsys:N最长访问时间:90 ns
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:4K,32K
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.065 mA最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.65 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

AT49BV320-90TI 数据手册

 浏览型号AT49BV320-90TI的Datasheet PDF文件第2页浏览型号AT49BV320-90TI的Datasheet PDF文件第3页浏览型号AT49BV320-90TI的Datasheet PDF文件第4页浏览型号AT49BV320-90TI的Datasheet PDF文件第5页浏览型号AT49BV320-90TI的Datasheet PDF文件第6页浏览型号AT49BV320-90TI的Datasheet PDF文件第7页 
Features  
Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)  
Access Time – 85 ns  
Sector Erase Architecture  
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout  
Fast Word Program Time – 15 µs  
Fast Sector Erase Time – 200 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase  
of a Different Sector  
– Supports Reading Any Byte/Word by Suspending Programming of Any  
Other Byte/Word  
32-megabit  
Low-power Operation  
(2M x 16/4M x 8)  
3-volt Only  
Flash Memory  
– 25 mA Active  
– 10 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
VPP Pin for Write Protection  
RESET Input for Device Initialization  
Sector Lockdown Support  
TSOP, CBGA and µBGA Package Options  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
AT49BV320  
AT49BV320T  
AT49BV321  
AT49BV321T  
AT49LV320  
AT49LV320T  
AT49LV321  
AT49LV321T  
Description  
The AT49BV/LV32X(T) is a 3.0-volt 32-megabit Flash memory organized as  
2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data  
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided  
into 71 sectors for erase operations. The device is offered in 48-lead TSOP, and  
48-ball CBGA and µBGA packages. The device has CE and OE control signals to  
avoid any bus contention. This device can be read or reprogrammed using a single  
power supply, making it ideally suited for in-system programming.  
Pin Configurations  
Pin Name  
A0 - A20  
CE  
Function  
Addresses  
Chip Enable  
Recommend Using  
AT49BV320A(T)/322A(T)  
for New Designs.  
OE  
Output Enable  
Write Enable  
Reset  
WE  
RESET  
RDY/BUSY  
VPP  
READY/BUSY Output  
Write Protection  
Data Inputs/Outputs  
I/O0 - I/O14  
I/O15 (A-1)  
I/O15 (Data Input/Output, Word Mode)  
A-1 (LSB Address Input, Byte Mode)  
BYTE  
NC  
Selects Byte or Word Mode  
No Connect  
VCCQ  
Output Power Supply  
Rev. 1494H–FLASH–01/03  

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