AT28C040-20LISL703

更新时间： 2024-01-14 20:24:15

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器
页数	文件大小	规格书
12页	335K
描述
4-Megabit 512K x 8 Paged E2PROM

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中文翻译

获取价格

数据手册

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AT28C040-20LISL703 数据手册

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Features

• Read Access Time - 200 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 256 Bytes

– Internal Control Timer

• Fast Write Cycle Time

– Page Write Cycle Time - 10 ms Maximum

– 1 to 256 Byte Page Write Operation

• Low Power Dissipation

– 80 mA Active Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10,000 Cycles

– Data Retention: 10 Years

• Single 5V ± 10% Supply

4-Megabit

(512K x 8)

Paged E²PROM

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-Wide Pinout

AT28C040

Description

The AT28C040 is a high-performance electrically erasable and programmable read

only memory (E²PROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device

offers access times to 200 ns with power dissipation of just 440 mW.

(continued)

Pin Configurations

Pin Name

A0 - A18

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

I/O0 - I/O7

AT28C040 4-

Megabit (512K x

8) Paged

E²PROM

SIDE BRAZE,

FLATPACK

Top View

LCC

Top View

Rev. 0542B–04/98

12 3 4 5 6 7...12

中文翻译

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AT28C040-25	ATMEL	获取价格	4-Megabit 512K x 8 Paged E2PROM
AT28C040-25BC	ATMEL	获取价格	4-Megabit 512K x 8 Paged E2PROM
AT28C040-25BI	ATMEL	获取价格	4-Megabit 512K x 8 Paged E2PROM
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