Datasheet > AS7C34096-10TCH

AS7C34096-10TCH

更新时间： 2022-12-01 20:41:33

品牌	Logo	应用领域
ALSC		静态存储器光电二极管
页数	文件大小	规格书
10页	269K
描述
Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, TSOP2-44

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数据手册

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AS7C34096-10TCH 数据手册

AS7C4096

AS7C34096

ꢂꢃꢆ

Read cycle (over the operating range)

–10

–12

–15

–20

Parameter

Read cycle time

Symbol Min

Max

–

Min

–

Max

–

Min

–

Max

–

Min

–

Max Unit Notes

t_RC

t_AA

t_ACE

t_OE

–

Address access time

Chip enable (CE) access time

Output enable (OE) access time

–

Output hold from address change t_OH

–

CE Low to output in low Z

CE High to output in high Z

OE Low to output in low Z

OE High to output in high Z

Power up time

t_CLZ

t_CHZ

t_OLZ

t_OHZ

t_PU

–

4, 5

–

Power down time

t_PD

–

Key to switching waveforms

Rising input

Falling input

Undefined/don’t care

ꢂꢃꢄꢃꢅꢃꢆ

Read waveform 1 (address controlled)

Address

Data valid

OUT

ꢂꢃꢄꢃꢇꢃꢆ

Read waveform 2 (CE, OE controlled)

RC1

OHZ

OLZ

ACE

CHZ

OUT

Data valid

CLZ

Supply

current

50%

11/28/01; v.1.7

Alliance Semiconductor

P. 4 of 10

1 2 345 6 7...10

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