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AS7C251MNTD32A-200TQI PDF预览

AS7C251MNTD32A-200TQI

更新时间: 2024-02-16 08:22:55
品牌 Logo 应用领域
ALSC 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
18页 436K
描述
2.5V 1M x 32/36 Pipelined SRAM with NTD

AS7C251MNTD32A-200TQI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.38
Is Samacsys:N最长访问时间:3.2 ns
其他特性:PIPELINED ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e3长度:20 mm
内存密度:33554432 bit内存集成电路类型:ZBT SRAM
内存宽度:32功能数量:1
端子数量:100字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX32封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):245认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):2.625 V
最小供电电压 (Vsup):2.375 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

AS7C251MNTD32A-200TQI 数据手册

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AS7C251MNTD32A  
AS7C251MNTD36A  
®
Functional description  
The AS7C251MNTD32A/36A family is a high performance CMOS 32 Mbit synchronous Static Random Access Memory (SRAM)  
organized as 1,048,576 words × 32 or 36 bits and incorporates a LATE LATE Write.  
This variation of the 32Mb+ synchronous SRAM uses the No Turnaround Delay (NTD) architecture, featuring an enhanced write  
operation that improves bandwidth over pipelined burst devices. In a normal pipelined burst device, the write data, command, and address  
are all applied to the device on the same clock edge. If a read command follows this write command, the system must wait for two 'dead'  
cycles for valid data to become available. These dead cycles can significantly reduce overall bandwidth for applications requiring random  
access or read-modify-write operations.  
NTDdevices use the memory bus more efficiently by introducing a write latency which matches the two-cycle pipelined or one-cycle  
flow-through read latency. Write data is applied two cycles after the write command and address, allowing the read pipeline to clear. With  
NTD, write and read operations can be used in any order without producing dead bus cycles.  
Assert R/W low to perform write cycles. Byte write enable controls write access to specific bytes, or can be tied low for full 32/36 bit writes.  
Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is applied to the device two clock  
cycles later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled for write operations; it can be tied low for  
normal operations. Outputs go to a high impedance state when the device is de-selected by any of the three chip enable inputs. In pipelined  
mode, a two cycle deselect latency allows pending read or write operations to be completed.  
Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external addresses, chip select, R/W  
pins are ignored, and internal address counters increment in the count sequence specified by the LBO control. Any device operations, including  
burst, can be stalled using the CEN=1, the clock enable input.  
The AS7C251MNTD32A/36A operates with a 2.5V ± 5% power supply for the device core (VDD). These devices are available in a 100-pin  
TQFP package.  
TQFP Capacitance  
Parameter  
Symbol  
Test conditions  
V = 0V  
Min  
Max  
Unit  
pF  
*
Input capacitance  
I/O capacitance  
*Guaranteed not tested  
C
-
-
5
7
IN  
in  
*
C
V = V = 0V  
pF  
I/O  
in  
out  
TQFP thermal resistance  
Description  
Conditions  
Symbol  
Typical  
40  
Units  
°C/W  
°C/W  
1–layer  
4–layer  
θJA  
θJA  
Thermal resistance  
(junction to ambient)1  
Test conditions follow standard test methods  
and procedures for measuring thermal  
impedance, per EIA/JESD51  
22  
Thermal resistance  
(junction to top of case)1  
θJC  
8
°C/W  
1 This parameter is sampled  
1/17/05, V 1.2  
Alliance Semiconductor  
P. 4 of 18  

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