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AS6UA5128-100HFI PDF预览

AS6UA5128-100HFI

更新时间: 2024-02-25 14:39:33
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ALSC 静态存储器
页数 文件大小 规格书
11页 218K
描述
SRAM

AS6UA5128-100HFI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92

AS6UA5128-100HFI 数据手册

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AS6UA5128  
Data retention characteristics (over the operating range)  
Parameter  
Symbol  
Test conditions  
Min  
1.2V  
Max  
3.6  
2
Unit  
V
V
CC for data retention  
VDR  
VCC = 1.2V  
CS VCC – 0.1V or  
Data retention current  
ICCDR  
tCDR  
tR  
mA  
ns  
V
VCC – 0.1V or  
Chip deselect to data retention time  
Operation recovery time  
0
IN  
V
0.1V  
IN  
tRC  
ns  
Data retention waveform  
Data retention mode  
1.2V  
V
V
V
CC  
V
CC  
CC  
DR  
t
t
R
CDR  
V
DR  
V
V
IH  
CS  
IH  
AC test loads and waveforms  
Thevenin equivalent:  
R1  
R1  
V
R
CC  
V
TH  
CC  
V
OUTPUT  
OUTPUT  
OUTPUT  
30 pF  
5 pF  
ALL INPUT PULSES  
V
Typ  
R2  
CC  
R2  
90%  
10%  
90%  
10%  
INCLUDING  
JIG AND  
INCLUDING  
JIG AND  
SCOPE  
< 5 ns  
(c)  
GND  
(a)  
SCOPE  
(b)  
Parameters  
VCC = 3.0V  
1105  
VCC = 2.5V  
16670  
15380  
8000  
VCC = 2.0V  
15294  
Unit  
R1  
R2  
Ohms  
Ohms  
Ohms  
Volts  
1550  
11300  
RTH  
645  
6500  
V
1.75V  
1.2V  
0.85V  
TH  
Notes  
1
2
3
4
5
6
7
8
9
During V power-up, a pull-up resistor to V on CS is required to meet I specification.  
CC CC SB  
This parameter is sampled, but not 100% tested.  
For test conditions, see AC Test Conditions.  
t
and t are specified with CL = 5pF as in Figure C. Transition is measured ±500 mV from steady-state voltage.  
CHZ  
CLZ  
This parameter is guaranteed, but not tested.  
WEis HIGH for read cycle.  
CSand OE are LOW for read cycle.  
Address valid prior to or coincident with CS transition LOW.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 CS or WE must be HIGH during address transitions. Either CS or WE asserting high terminates a write cycle.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 N/ A.  
13 1.2V data retention applies to commercial and industrial temperature range operations.  
14 C = 30pF, except at high Z and low Z parameters, where C = 5pF.  
6
ALLIANCE SEMICONDUCTOR  
7/ 14/ 00