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AS4PJ

更新时间: 2024-09-21 12:50:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 93K
描述
High Current Density Standard Avalanche Surface Mount Rectifiers

AS4PJ 数据手册

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New Product  
AS4PD thru AS4PM  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Standard Avalanche  
Surface Mount Rectifiers  
FEATURES  
eSMP® Series  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Glass passivated chip junction  
• Controlled avalanche characteristics  
K
• Low leakage current  
1
• High forward surge capability  
2
• AEC-Q101 qualified  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
TO-277A (SMPC)  
Anode 1  
Anode 2  
K
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Cathode  
Halogen-free according to IEC 61249-2-21 definition  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
4.0 A  
Case: TO-277A (SMPC)  
VRRM  
IFSM  
200 V to 1000 V  
100 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
EAS  
20 mJ  
commercial grade  
Base P/NHM3 - halogen-free, RoHS compliant, and  
automotive grade  
VF at IF = 4 A  
TJ max.  
0.92 V  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL AS4PD AS4PG  
AS4PJ  
AS4J  
600  
AS4PK AS4PM UNIT  
Device marking code  
AS4D  
200  
AS4G  
400  
AS4K  
800  
AS4M  
1000  
Maximum repetitive peak reverse voltage  
VRRM  
V
A
(1)  
IF  
4.0  
Maximum DC forward current (fig. 1)  
(2)  
IF  
2.4  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
100  
A
I
AS = 2.5 A max.  
20  
30  
Non-repetitive avalanche energy  
at TJ = 25 °C  
EAS  
mJ  
°C  
IAS = 1.0 A typical  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
Notes  
(1)  
Mounted on 20 mm x 20 mm pad areas, 1 oz. FR4 PCB  
Free air, mounted on recommended copper pad area  
(2)  
Revision: 13-Jul-11  
Document Number: 88770  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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DIODE 2.4 A, 800 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL