Datasheet > AS4PJHM3-86A

AS4PJHM3-86A

更新时间： 2024-09-22 01:09:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	89K
描述
High Current Density Standard Avalanche Surface Mount Rectifiers

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AS4PJHM3-86A 数据手册

AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM

www.vishay.com

Vishay General Semiconductor

High Current Density Standard Avalanche

Surface Mount Rectifiers

FEATURES

eSMP^®Series

Available

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Glass passivated chip junction

• Controlled avalanche characteristics

• Low leakage current

• High forward surge capability

• AEC-Q101 qualified

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

TO-277A (SMPC)

Anode 1

Anode 2

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Cathode

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-277A (SMPC)

I_F(AV)

4.0 A

Molding compound meets UL 94 V-0 flammability rating

200 V, 400 V, 600 V, 800 V,

1000 V

V_RRM

Base P/N-M3

halogen-free, RoHS-compliant, and

commercial grade

I_FSM

E_AS

100 A

20 mJ

0.92 V

Base P/NHM3

- halogen-free, RoHS-compliant, and

automotive grade

V_Fat I_F= 4 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

T_Jmax.

Package

175 °C

TO-277A (SMPC)

Single die

meets JESD 201 class 2 whisker test

Diode variations

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL AS4PD AS4PG

AS4PJ

AS4J

600

AS4PK AS4PM UNIT

Device marking code

AS4D

200

AS4G

400

AS4K

800

AS4M

1000

Max. repetitive peak reverse voltage

V_RRM

(1)

I_F

4.0

Max. DC forward current (fig. 1)

(2)

I_F

2.4

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

I_FSM

100

_AS= 2.5 A max.

Non-repetitive avalanche energy 

E_AS

°C

at T_J= 25 °C

I_AS= 1.0 A typical

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 175

Notes

(1)

Mounted on 20 mm x 20 mm pad areas, 1 oz. FR4 PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 14-Aug-13

Document Number: 88770

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与AS4PJHM3-86A相关器件

型号	品牌	获取价格	描述	数据表
AS4PJHM3-87A	VISHAY	获取价格	High Current Density Standard Avalanche Surface Mount Rectifiers
AS4PJ-M3/86A	VISHAY	获取价格	High Current Density Standard Avalanche Surface Mount Rectifiers
AS4PJ-M3/87A	VISHAY	获取价格	High Current Density Standard Avalanche Surface Mount Rectifiers
AS4PJ-M3-86A	VISHAY	获取价格	High Current Density Standard Avalanche Surface Mount Rectifiers
AS4PJ-M3-87A	VISHAY	获取价格	High Current Density Standard Avalanche Surface Mount Rectifiers
AS4PK	VISHAY	获取价格	High Current Density Standard Avalanche Surface Mount Rectifiers
AS4PKHM3/86A	VISHAY	获取价格	DIODE 2.4 A, 800 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL
AS4PKHM3/87A	VISHAY	获取价格	DIODE 2.4 A, 800 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PL
AS4PKHM3_A/H	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2.4A, 800V V(RRM), Silicon, TO-277A, HALOG
AS4PKHM3_A/I	VISHAY	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2.4A, 800V V(RRM), Silicon, TO-277A, HALOG

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