AS4LC4M4E0
AS4LC4M4E1
®
Write cycle
-50
-60
Symbol Parameter
Min
0
Max
–
Min
0
Max
–
Unit
ns
Notes
11
tWCS
tWCH
tWP
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
10
10
10
8
–
10
10
10
10
0
–
ns
11
–
–
ns
tRWL
tCWL
tDS
–
–
ns
–
–
ns
0
–
–
ns
12
12
tDH
Data-in hold time
8
–
10
–
ns
Read-modify-write cycle
-50
-60
Symbol Parameter
Min
113
67
Max
Min
135
77
Max
Unit
ns
Notes
tRWC
tRWD
tCWD
tAWD
Read-write cycle time
–
–
–
–
–
–
–
–
RAS to WE delay time
ns
11
11
11
CAS to WE delay time
32
35
ns
Column address to WE delay time
42
47
ns
Refresh cycle
-50
-60
Symbol Parameter
Min
5
Max
Min
5
Max
Unit
ns
Notes
tCSR
tCHR
tRPC
CAS setup time (CAS-before-RAS
)
–
–
–
–
–
–
3
3
CAS hold time (CAS-before-RAS)
8
10
0
ns
RAS precharge to CAS hold time
0
ns
CAS precharge time
(CBR counter test)
tCPT
10
10
–
ns
4/11/01; V.1.1
Alliance Semiconductor
P. 6 of 15