5秒后页面跳转
捷配首页

Datasheet > 存储 > DRAM> AS4C4M4F1-60
AS4C4M4F1-60 PDF预览

AS4C4M4F1-60

更新时间： 2024-01-26 21:28:06
品牌 Logo 应用领域
ALSC 动态存储器
页数 文件大小 规格书
18页 271K
描述
5V 4M×4 CMOS DRAM (Fast Page mode)

阅读下载

获取价格

AS4C4M4F1-60 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：SOP, TSOP24/26,.36
针数：26/24Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.02
风险等级：5.9Is Samacsys：N
访问模式：FAST PAGE最长访问时间：60 ns
其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型：COMMON
JESD-30 代码：R-PDSO-G24JESD-609代码：e0
内存密度：16777216 bit内存集成电路类型：FAST PAGE DRAM
内存宽度：4功能数量：1
端口数量：1端子数量：24
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：4MX4
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：TSOP24/26,.36
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240电源：5 V
认证状态：Not Qualified刷新周期：2048
自我刷新：YES最大待机电流：0.001 A
子类别：DRAMs最大压摆率：0.12 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AS4C4M4F1-60 数据手册

 浏览型号AS4C4M4F1-60的Datasheet PDF文件第5页浏览型号AS4C4M4F1-60的Datasheet PDF文件第6页浏览型号AS4C4M4F1-60的Datasheet PDF文件第7页浏览型号AS4C4M4F1-60的Datasheet PDF文件第9页浏览型号AS4C4M4F1-60的Datasheet PDF文件第10页浏览型号AS4C4M4F1-60的Datasheet PDF文件第11页 
AS4C4M4F0  
AS4C4M4F1  
®
Notes  
1
2
3
I
, I , I , and I  
are dependent on frequency.  
CC6  
CC1 CC3 CC4  
I
and I  
depend on output loading. Specified values are obtained with the output open.  
CC4  
CC1  
An initial pause of 200 µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal  
refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after  
extended periods of bias without clocks (greater than 8 ms).  
4
AC Characteristics assume t = 2 ns. All AC parameters are measured with a load equivalent to two TTL loads and 100 pF, V (min) ≥ GND and V  
IH  
T
IL  
(max) ≤ V  
.
CC  
5
6
V
(min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between V and V .  
I
H
I
L
I
H
I
L
Operation within the t  
specified t  
(max) limit insures that t  
(max) limit, then access time is controlled exclusively by t  
(max) can be met. t  
(max) is specified as a reference point only. If t  
(max) is specified as a reference point only. If t  
is greater than the  
is greater than the  
RCD  
RAC  
RCD  
.
RCD  
RCD  
CAC  
7
Operation within the t  
(max) limit insures that t  
(max) can be met. t  
RAC RAD  
RAD  
RAD  
specified t  
(max) limit, then access time is controlled exclusively by t .  
AA  
RAD  
8
Assumes three state test load (5 pF and a 380 Ω Thevenin equivalent).  
Either t or t must be satisfied for a read cycle.  
9
RCH  
RRH  
10  
t
(max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels. t  
is referenced from  
OFF  
OFF  
rising edge of RAS or CAS, whichever occurs last.  
t , t , t , t and t are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only.  
WCS WCH RWD CWD  
11  
AWD  
If tWS ≥ t (min) and tWH ≥ t (min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the  
WS  
WH  
cycle. If tRWD ≥ t  
(min), t  
≥ t  
(min) and tAWD ≥ t  
(min), the cycle is a read-write cycle and the data out will contain data read from the  
RWD  
CWD  
CWD  
AWD  
selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate.  
12 These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles.  
13 Access time is determined by the longest of t or t or t  
CAA  
CAC  
CPA  
14  
t
ASC ≥ t to achieve t (min) and t  
(max) values.  
CPA  
CP  
PC  
15 These parameters are sampled and not 100% tested.  
16 These characteristics apply to AS4C4M4F0 5V devices.  
AC test conditions  
- Access times are measured with output reference levels of V  
=
OH  
2.4V and V = 0.4V,  
OL  
V
= 2.4V and V = 0.8V  
IH  
IL  
- Input rise and fall times: 2 ns  
+5V  
+3.3V  
R1 = 828Ω  
R1 = 828Ω  
Dout  
Dout  
100 pF*  
R2 = 295Ω  
50 pF*  
R2 = 295Ω  
*including scope  
and jig capacitance  
*including scope  
and jig capacitance  
GND  
GND  
Figure A: Equivalent output load  
(AS4C4M4E0)  
Figure B: Equivalent output load  
(AS4LC4M4E0)  
Key to switching waveforms  
Rising input  
Falling input  
Undefined output/don’t care  
4/11/01; v.0.9  
Alliance Semiconductor  
P. 8 of 18  
1...567891011...18

下载PDF

与AS4C4M4F1-60相关器件

型号 品牌 描述 获取价格 数据表
AS4C4M4F1-60JC ALSC 5V 4M×4 CMOS DRAM (Fast Page mode)

获取价格
AS4C4M4F1-60JI ALSC 5V 4M×4 CMOS DRAM (Fast Page mode)

获取价格
AS4C4M4F1-60TC ALSC 5V 4M×4 CMOS DRAM (Fast Page mode)

获取价格
AS4C4M4F1-60TI ALSC 5V 4M×4 CMOS DRAM (Fast Page mode)

获取价格
AS4C4M4F1Q-50JC ALSC Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

获取价格
AS4C4M4F1Q-50TC ALSC Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP-28

获取价格

与AS4C4M4F1-60相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证