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AS29F040CW-70/Q PDF预览

AS29F040CW-70/Q

更新时间: 2024-11-07 06:37:47
品牌 Logo 应用领域
AUSTIN /
页数 文件大小 规格书
27页 1428K
描述
512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY

AS29F040CW-70/Q 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DIP包装说明:DIP, DIP32,.6
针数:32Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.39最长访问时间:70 ns
命令用户界面:YES数据轮询:YES
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-CDIP-T32
长度:42.418 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:8
端子数量:32字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
座面最大高度:5.08 mm部门规模:64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.04 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:15.24 mm
Base Number Matches:1

AS29F040CW-70/Q 数据手册

 浏览型号AS29F040CW-70/Q的Datasheet PDF文件第2页浏览型号AS29F040CW-70/Q的Datasheet PDF文件第3页浏览型号AS29F040CW-70/Q的Datasheet PDF文件第4页浏览型号AS29F040CW-70/Q的Datasheet PDF文件第5页浏览型号AS29F040CW-70/Q的Datasheet PDF文件第6页浏览型号AS29F040CW-70/Q的Datasheet PDF文件第7页 
FLASH  
AS29F040  
Austin Semiconductor, Inc.  
PIN ASSIGNMENT  
512K x 8 FLASH  
(TopView)  
32-PIN Ceramic DIP (CW)  
32-pin Flatpack (F)  
UNIFORM SECTOR 5.0V FLASH MEMORY  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
• MIL-STD-883  
32-pin Lead Formed Flatpack (DCG)  
A18  
A16  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
VCC  
WE\  
A17  
A14  
32  
31  
30  
29  
1
2
3
4
• SMD 5962-96692  
28 A13  
27 A8  
5
6
FEATURES  
• Single 5.0V ±10% power supply operation  
• Fastest access times: 55, 60, 70, 90, 120, & 150ns  
• Low power consumption:  
26  
25  
24  
A9  
A11  
OE\  
7
8
9
3 20 mA typical active read current  
3 30 mA typical program/erase current  
3 1 µA typical standby current (standard access time to  
active mode)  
• Flexible sector architecture  
3 Eight uniform 64 Kbyte each  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
VSS  
23 A10  
10  
11  
12  
13  
14  
15  
16  
22  
21  
CE\  
DQ7  
20 DQ6  
19 DQ5  
18  
17  
DQ4  
DQ3  
3 Any combination of sectors can be erased  
3 Supports full chip erase  
• Sector protection  
32-PAD Ceramic LCC (ECA)  
• EmbeddedAlgorithms Erase & ProgramAlgorithms  
• Erase Suspend/Resume  
• Minimum 1,000,000 Program/Erase Cycles per sector  
4
3
2
32 31 30  
29  
5
6
7
8
9
A7  
A6  
A5  
A14  
A13  
A8  
1
28  
27  
26  
25  
24  
23  
22  
21  
guaranteed  
• Compatible with JEDEC standards  
3 Pinout and software compatible with single-power-  
supply FLASH  
• Data\ Polling and Toggle Bits  
• 20-year data retention at 125°C  
A4  
A9  
A3  
A11  
OE\  
A10  
CE\  
I/O 7  
10  
11  
12  
13  
A2  
A1  
A0  
I/O0  
14 15 16 17 18 19 20  
OPTIONS  
• Package Type  
MARKING  
Ceramic DIP (600 mil)  
Flatpack  
Lead Formed Flatpack  
Leadless Chip Carrier  
CW  
F
DCG  
ECA  
OPTIONS  
• Timing  
55ns  
MARKING  
-55  
-60  
60ns  
70ns  
90ns  
120ns  
150ns  
-70  
-90  
-120  
-150  
• Temperature Ranges  
Industrial Temperature (-40°C to +85°C) IT  
Military Temperature (-55°C to +125°C) XT**  
883C Processing (-55°C to +125°C)  
QML Processing (-55°C to +125°C)  
883C  
Q
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
AS29F040  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 2.2 09/07  
1

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