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AS29F040-150T PDF预览

AS29F040-150T

更新时间： 2024-01-08 21:47:20
品牌 Logo 应用领域
ALSC 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
18页 325K
描述
5V 512K x 8 CMOS FLASH EEPROM

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AS29F040-150T 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：TSOP1, TSSOP32,.8,20
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.37最长访问时间：150 ns
其他特性：10K WRITE/ERASE CYCLE ENDURANCE命令用户界面：YES
数据轮询：YES耐久性：10000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G32JESD-609代码：e0
长度：18.4 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1部门数/规模：8
端子数量：32字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP32,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
电源：5 V编程电压：5 V
认证状态：Not Qualified座面最大高度：1.2 mm
部门规模：64K最大待机电流：0.0004 A
子类别：Flash Memories最大压摆率：0.06 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
切换位：YES类型：NOR TYPE
宽度：8 mmBase Number Matches：1

AS29F040-150T 数据手册

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Item  
Description  
Sector erase requires six bus cycles: two unlock write cycles, a setup command, two additional unlock  
write cycles, and finally the sector erase command. Identify the sector to be erased by addressing any  
location in the sector. The address is latched on the falling edge of WE; the command, 30h, is latched  
on the rising edge of WE. The sector erase operation begins after a 80 µs time-out.  
To erase multiple sectors, write the sector erase command to each of the addresses of sectors to erase  
after following the six bus cycle operation above. Timing between writes of additional sectors must be  
<80 µs, or the AS29F040 ignores the command and erasure begins. During the erase time-out period  
any falling edge of WE resets the time-out. Any command (other than sector erase or erase suspend)  
during the time-out period resets the AS29F040 to read mode, and the device ignores the sector erase  
command string. Erase such ignored sectors by restarting the sector erase command on the ignored  
sectors.  
Sector erase  
The entire array need not be written with 0s prior to erasure. AS29F040 writes 0s to the entire sector  
prior to electrical erase; writing of 0s affects only selected sectors, leaving non-selected sectors  
unaffected. AS29F040 requires no CPU control or timing signals during sector erase operations.  
Automatic sector erase begins after erase time-out from the last rising edge of WE from the sector erase  
command stream and ends when the DATA polling (DQ7) is logical 1. DATA polling must be performed  
on addresses that fall within the sectors being erased. AS29F040 returns to read mode after sector erase  
unless DQ5 is set high by exceeding the time limit.  
Erase suspend allows interruption of sector erase operations to perform data reads from or writes to  
a sector not being erased. Erase suspend applies only during sector erase operations, including the time-  
out period. Writing an erase suspend command during sector erase time-out results in immediate  
termination of the time-out period and suspension of erase operation.  
AS29F040 ignores any commands during erase suspend other than read/ reset, program, or erase  
resume commands. Writing the Erase Resume command continues erase operations. Addresses are  
DON’T CARE when writing Erase suspend or Erase resume commands.  
AS29F040 takes 0.2–15 µs to suspend erase operations after receiving erase suspend command. To  
determine completion of erase suspend, check DQ6 after selecting an address of a sector not being  
erased. Check DQ2 in conjunction with DQ6 to determine if a sector is being erased. AS29F040  
ignores redundant writes of erase suspend.  
Erase suspend  
While in erase-suspend mode AS29F040 allows reading data (erase-suspend-read mode) from or  
programming data (erase-suspend-program mode) to any sector not undergoing sector erase, treated as  
standard read or standard programming mode. AS29F040 defaults to erase-suspend-read mode while  
an erase operation has been suspended.  
Write the resume command 30h to continue operation of sector erase. AS29F040 ignores redundant  
writes of the resume command. AS29F040 permits multiple suspend/ resume operations during sector  
erase.  
When attempting to write to a protected sector, DATA polling andToggle Bit 1 (DQ6) are activated for  
about <1 µs. When attempting to erase a protected sector, DATA polling andToggle Bit 1 (DQ6) are  
activated for about <5 µs. In both cases, the device returns to read mode without altering the specified  
sectors.  
Sector protect  
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与AS29F040-150T相关器件

型号 品牌 描述 获取价格 数据表
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AS29F040-55LC ALSC 5V 512K x 8 CMOS FLASH EEPROM

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AS29F040-55LI ALSC 5V 512K x 8 CMOS FLASH EEPROM

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AS29F040-55TC ALSC 5V 512K x 8 CMOS FLASH EEPROM

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