Datasheet > 存储 > 闪存> AS29F040-120TC

AS29F040-120TC

更新时间： 2024-02-02 03:23:51

品牌	Logo	应用领域
ALSC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
18页	325K
描述
5V 512K x 8 CMOS FLASH EEPROM

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AS29F040-120TC 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	TSOP1, TSSOP32,.8,20
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.35	最长访问时间：	120 ns
其他特性：	10K WRITE/ERASE CYCLE ENDURANCE	命令用户界面：	YES
数据轮询：	YES	耐久性：	10000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G32	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	4194304 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	部门数/规模：	8
端子数量：	32	字数：	524288 words
字数代码：	512000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	512KX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装等效代码：	TSSOP32,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
电源：	5 V	编程电压：	5 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
部门规模：	64K	最大待机电流：	0.0004 A
子类别：	Flash Memories	最大压摆率：	0.06 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
切换位：	YES	类型：	NOR TYPE
宽度：	8 mm	Base Number Matches：	1

AS29F040-120TC 数据手册

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Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects complement

of data last written when read during the automated on-chip algorithm (0 during erase algorithm);

reflects true data when read after completion of an automated on-chip algorithm (1 after completion of

erase agorithm).

DATA polling

(DQ7)

Active during automated on-chip algorithms or sector time outs. DQ6 toggles when CE or OE toggles,

or an Erase Resume command is invoked. When the automated on-chip algorithm is complete, DQ6

stops toggling and valid data can be read. DQ6 is valid after the rising edge of the fourth pulse of WE

during programming; after the rising edge of the sixth WE pulse during chip erase; after the last rising

edge of the sector erase WE pulse for sector erase. For protected sectors, DQ6 toggles for <1 µs during

writes, and <5 µs during erase (if all selected sectors are protected).

Toggle bit 1 (DQ6)

Indicates unsuccessful completion of program/ erase operation (DQ5 = 1). DATA polling remains

active; CE powers the device down to 2 mA. If DQ5 = 1 during chip erase, all or some sectors are

defective; during sector erase, the sector is defective (in this case, reset the device and execute

a program or erase command sequence to continue working with functional sectors); during byte

programming, that particular byte is defective. Attempting to program 0 to 1 will set DQ5 = 1.

Exceeding time

limit (DQ5)

Checks whether sector erase timer window is open. If DQ3 = 1, erase is in progress; no commands will

be accepted. If DQ3 = 0, the device will accept additional sector erase commands. Check DQ3 before

and after each Sector Erase command to verify that the command was accepted.

Sector erase timer

(DQ3)

During sector erase, DQ2 toggles with OE or CE only during an attempt to read a sector being erased.

During chip erase, DQ2 toggles with OE or CE for all addresses. If DQ5 = 1, DQ2 toggles only at sector

addresses where failure occurred, and will not toggle at other sector addresses. Use DQ2 in conjunction

with DQ6 to determine whether device is in auto erase or erase suspend mode.

Toggle bit 2 (DQ2)

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Status

DQ7

DQ6

DQ5

DQ3

DQ2

Auto programming (byte)

Program/ erase in auto erase

Read erasing sector

Toggle

No toggle

Toggle^*

Toggle

In progress

Erase

suspend

mode

Read non-erasing

sector

Data

DQ7

Data

Program in erase

suspend

Toggle

Toggle^*

Auto programming (byte)

Program/ erase in auto erase

Program in erase suspend

DQ7

Toggle

No toggle

Toggle^†

No toggle^†

Exceeded time limits

DQ7

* Toggles with OE or CE only for erasing or erase suspended sector addresses.

† Toggles with OE or CE only for erasing or erase suspended sector addresses.

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与AS29F040-120TC相关器件

型号	品牌	描述	获取价格	数据表
AS29F040-120TI	ALSC	5V 512K x 8 CMOS FLASH EEPROM	获取价格
AS29F040-150LC	ALSC	5V 512K x 8 CMOS FLASH EEPROM	获取价格
AS29F040-150LI	ALSC	5V 512K x 8 CMOS FLASH EEPROM	获取价格
AS29F040-150T	ALSC	5V 512K x 8 CMOS FLASH EEPROM	获取价格
AS29F040-150TC	ALSC	5V 512K x 8 CMOS FLASH EEPROM	获取价格
AS29F040-150TI	ALSC	Flash, 512KX8, 150ns, PDSO32, 8 X 20 MM, TSOP-32	获取价格

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