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AS29F010CW-12/883C PDF预览

AS29F010CW-12/883C

更新时间： 2024-02-25 19:48:25
品牌 Logo 应用领域
AUSTIN /
页数 文件大小 规格书
22页 242K
描述
128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY

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AS29F010CW-12/883C 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DIP
包装说明：0.600 INCH, CERAMIC, DIP-32针数：32
Reach Compliance Code：unknownECCN代码：3A001.A.2.C
HTS代码：8542.32.00.51风险等级：5.61
最长访问时间：120 nsJESD-30 代码：R-CDIP-T32
JESD-609代码：e0长度：42.418 mm
内存密度：1048576 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：32字数：131072 words
字数代码：128000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-55 °C
组织：128KX8封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DIP封装形状：RECTANGULAR
封装形式：IN-LINE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED编程电压：5 V
认证状态：Not Qualified座面最大高度：5.1308 mm
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：MILITARY
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED类型：NOR TYPE
宽度：15.24 mm

AS29F010CW-12/883C 数据手册

 浏览型号AS29F010CW-12/883C的Datasheet PDF文件第2页浏览型号AS29F010CW-12/883C的Datasheet PDF文件第3页浏览型号AS29F010CW-12/883C的Datasheet PDF文件第4页浏览型号AS29F010CW-12/883C的Datasheet PDF文件第6页浏览型号AS29F010CW-12/883C的Datasheet PDF文件第7页浏览型号AS29F010CW-12/883C的Datasheet PDF文件第8页 
FLASH  
AS29F010  
Austin Semiconductor, Inc.  
address bits that are don’t care. When all necessary bits have  
been set as required, the programming equipment may then  
read the corresponding identifier code on DQ7 - DQ0  
To access the autoselect codes in-system, the host system  
can issue the autoselect command via the command register, as  
shown in the Command Definitions table. This method does  
Standby Mode  
When the system is not reading or writing to the device, it  
can place the device in the standby mode. In this mode, current  
consumption is greatly reduced, and the outputs are placed in  
the high impedance state, independent of the OE\ input.  
The device enters the CMOS standby mode when the CE\  
not require VID. See “Command Definitions” for details on  
using the autoselect mode.  
pin is held at VCC ± 0.5V. (Note that this is a more restricted  
voltage range than VIH.) The device enters the TTL standby  
more when CE\ is held at VIH. The device requires the standard  
access time (tCE) before it is ready to read data.  
If the device is deselected during erasure or programming,  
the device draws active current until the operation is completed.  
ICC3 in the DC Characteristics table represents the standby  
current specification.  
Sector Protection/Unprotection  
The hardware sector protection feature disables both  
program and erase operations in any sector. The hardware  
sector unprotection feature re-enables both program and erase  
operations in previously protected sectors.  
Sector protection/unprotection must be implemented  
using programming equipment. The procedure requires a high  
voltage (VID) on address pin A9 and the control pins. The  
device is shipped with all sectors unprotected. It is possible to  
determine whether a sector is protected or unprotected. See  
“Autoselect Mode” for details.  
Output Disable Mode  
When the OE\ input is at VIH, output from the device is  
disabled. The output pins are placed in the high impedance  
state.  
Autoselect Mode  
Hardware Data Protection  
The autoselect mode provides manufacturer and device  
identification, and sector protection verification, through  
identifier codes output on DQ7 - DQ0. This mode is primarily  
intended for programming equipment to automatically match a  
device to be programmed with its corresponding programming  
algorithm. However, the autoselect codes can also be accessed  
in-system through the command register.  
The command sequence requirement of unlock cycles for  
programming or erasing provides data protection against  
inadvertent writes (refer to the Command Definitions table). In  
addition, the following hardware data protection measures  
prevent accidental erasure or programming, which might  
otherwise be caused by spurious system level signals during  
VCC power-up and power-down transitions, or from system  
noise.  
When using programming equipment, the autoselect mode  
requires VID on address pin A9. Address pins A6, A1, and A0  
must be as shown in the Autoselect Codes (High Voltage  
Method) table. In addition, when verifying sector protection,  
the sector address must appear on the appropriate highest  
order address bits. Refer to the corresponding Sector Address  
Tables. The Command Definitions table shows the remaining  
Low VCC Write Inhibit  
When VCC is less than VLKO, the device does not accept  
any write cycles. This protects data during VCC power-up and  
power-down. The command register and all internal program/  
TABLE 2: SECTOR ADDRESSES TABLE  
SECTOR  
SA0  
A16  
0
0
0
0
1
1
1
1
A15  
0
0
1
1
0
0
1
1
A14  
0
1
0
1
0
1
0
1
ADDRESS RANGE  
00000h - 03FFFh  
04000h - 07FFFh  
08000h - 0BFFFh  
0C000h - 0FFFFh  
10000h - 13FFFh  
14000h - 17FFFh  
18000h - 1BFFFh  
1C000h - 1FFFFh  
SA1  
SA2  
SA3  
SA4  
SA5  
SA6  
SA7  
NOTE: All sectors are 16 Kbytes in size.  
AS29F010  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 0.3 10/02  
5
12345678...22

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