TVS Diode Arrays (SPA® Diodes) Datasheet
AQ27COM-02JTG
27 V Bidirectional 200 W TVS Diode Array, General Purpose ESD Protection
Absolute Maximum Ratings
Symbol
PPK
IPP
Parameter
Value
200
4
Units
W
A
Peak Pulse Power (tp = 8/20 μs)
Peak Current (tp = 8/20 μs)
TOP
OperatingTemperature
StorageTemperature
-40 to 150
-55 to 150
°C
°C
TSTOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any
other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (TOP = 25 ºC)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
VRWM
Pin 1 or Pin2 to Pin 3
27
V
Breakdown Voltage
VBR
IR = 1 mA, Pin 1 or Pin2 to Pin 3
28
35
50
V
Reverse Leakage Current
ILEAK
VR = 27 V
10
40.5
50
nA
V
IPP = 1 A, tp = 8/20 μs, Pin 1 or Pin2 to Pin 3
IPP = 4 A, tp = 8/20 μs, Pin 1 or Pin2 to Pin 3
TLP, tP = 100 ns, Pin 1 or Pin2 to Pin 3
IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Clamp Voltage1
VC
V
Dynamic Resistance2
RDYN
0.5
Ω
30
30
30
30
kV
kV
kV
kV
ESD Withstand Voltage1
VESD
ISO 10605 (Contact Discharge)
ISO 10605 (Air Discharge)
Reverse Bias = 0 V, f = 1 MHz;
Pin 1 or Pin 2 to Pin 3
Diode Capacitance1
CI/O-GND
12
pF
Note:
1. Parameter is guaranteed by design and/or component characterization.
2. Transmission Line Pulse (TLP) with 100ns width, 0.2 ns rise time, and average window t1 = 70 ns to t2 = 90 ns.
3. Device stressed with ten non-repetitive ESD pulses.
Capacitance vs. Reverse Bias
ClampingVoltage vs IPP
20.0
60.0
55.0
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
15.0
10.0
5.0
0.0
0.0
1
2
3
4
0
3
6
9
12
15
18
21
24
27
Peak Pulse Current - IPP (A)
Bias Voltage (V)
© 2023 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: FW.03/17/23