Datasheet > APTGF25H120T1G

APTGF25H120T1G

更新时间： 2025-08-27 19:03:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	486K
描述
元器件封装:SP1;

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中文翻译

获取价格

数据手册

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APTGF25H120T1G 数据手册

APTGF25H120T1G

V_CES= 1200V

I_C= 25A @ Tc = 80°C

Full - Bridge

NPT IGBT Power Module

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

CR1

CR3

Features



Non Punch Through (NPT) Fast IGBT

Low voltage drop

Low tail current

Switching frequency up to 50 kHz

Soft recovery parallel diodes

Low diode VF

CR2 CR4

Low leakage current

RBSOA and SCSOA rated



Very low stray inductance

Symmetrical design

NTC



Internal thermistor for temperature monitoring

High level of integration

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability



RoHS Compliant

Pins 3/4 must be shorted together

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

100

±20

208

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_C= 25°C

T_j= 125°C

RBSOA Reverse Bias Safe Operating Area

50A@1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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