Datasheet > APTGF150DH120G

APTGF150DH120G

更新时间： 2025-08-27 19:03:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
6页	428K
描述
元器件封装:SP6;

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中文翻译

获取价格

数据手册

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APTGF150DH120G 数据手册

APTGF150DH120G

V_CES= 1200V

I_C= 150A @ Tc = 80°C

Asymmetrical - Bridge

NPT IGBT Power Module

Application



Welding converters

Switched Mode Power Supplies

Switched Reluctance Motor Drives

VBUS

CR3

Features



Non Punch Through (NPT) Fast IGBT

OUT1 OUT2

Low voltage drop

Low tail current

Switching frequency up to 50 kHz

Soft recovery parallel diodes

Low diode VF

CR2

Low leakage current

RBSOA and SCSOA rated

0/VBUS



Kelvin emitter for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors



High level of integration

Benefits



Outstanding performance at high frequency

operation



Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

Low profile

RoHS compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

1200

Unit

V_CES

Collector - Emitter Breakdown Voltage

T_c= 25°C

T_c= 80°C

T_c= 25°C

200

150

300

±20

961

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_c= 25°C

RBSOA Reverse Bias Safe Operating Area

T_j= 150°C 300A @ 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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