Datasheet > APTDF400U120G-Module

APTDF400U120G-Module

更新时间： 2023-12-06 20:09:24

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
4页	415K
描述
FRED Si diode Ultra fast recovery timesSoft recovery characteristicsHigh blocking voltageHigh curr

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APTDF400U120G-Module 数据手册

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APTDF400U120G

V_CES= 1200V

I_C= 400A @ Tc = 80°C

Single diode

Power Module

Application



Anti-Parallel diode

Switchmode Power Supply

Inverters



Snubber diode

Uninterruptible Power Supply (UPS)

Induction heating

Welding equipment

High speed rectifiers

Electric vehicles

Features



Ultra fast recovery times

Soft recovery characteristics

Very low stray inductance

High blocking voltage

High current

Low leakage current

Benefits



Low losses

Low noise switching

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

RoHS Compliant

Absolute maximum ratings

Symbol

V_R

Parameter

Maximum DC reverse Voltage

Max ratings

Unit

1200

V_RRM

Maximum Peak Repetitive Reverse Voltage

T_c= 25°C

450

Maximum Average Forward

Current

I_F(AV)

Duty cycle = 50%

T_c= 80°C

400

750

5000

I_F(RMS)

I_FSM

RMS Forward Current

Non-Repetitive Forward Surge Current

T_j= 25°C

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

All ratings @ T_j= 25°C unless otherwise specified

1 - 4

www.microsemi.com

12 3 4

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