Datasheet > APT10M11JVRU2-Module

APT10M11JVRU2-Module

更新时间： 2024-10-01 14:53:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
8页	736K
描述
MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery ruggedKe

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APT10M11JVRU2-Module 数据手册

浏览型号APT10M11JVRU2-Module的Datasheet PDF文件第2页

浏览型号APT10M11JVRU2-Module的Datasheet PDF文件第3页

浏览型号APT10M11JVRU2-Module的Datasheet PDF文件第4页

浏览型号APT10M11JVRU2-Module的Datasheet PDF文件第5页

浏览型号APT10M11JVRU2-Module的Datasheet PDF文件第6页

APT10M11JVRU2

V_DSS= 100V

R_DSon= 11m max @ Tj = 25°C

I_D= 142A @ Tc = 25°C

ISOTOP^®Boost chopper

MOSFET Power Module

Application

AC and DC motor control



Switched Mode Power Supplies

Power Factor Correction

Brake switch

Features



Power MOS V^®MOSFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic diode

Avalanche energy rated

Very rugged



ISOTOP^®Package (SOT-227)

Very low stray inductance

High level of integration

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Very rugged

Low profile

RoHS Compliant

ISOTOP^

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

100

142

106

576

±30

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

m

P_D

Maximum Power Dissipation

T_c= 25°C

Tc = 90°C

450

I_AR

E_AR

E_AS

IF_AV

IF_RMS

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Maximum Average Forward Current

RMS Forward Current (Square wave, 50% duty)

144

2500

Duty cycle=0.5

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 – 8

www.microsemi.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与APT10M11JVRU2-Module相关器件

型号	品牌	获取价格	描述	数据表
APT10M11JVRU3	ADPOW	获取价格	ISOTOP Buck chopper MOSFET Power Module
APT10M11JVRU3	MICROSEMI	获取价格	ISOTOP Buck chopper MOSFET Power Module
APT10M11JVRU3-Module	MICROCHIP	获取价格	MOSFETsLow RDSonLow input and Miller capacitanceLow gate chargeAvalanche energy ratedVery
APT10M11LVFR	ADPOW	获取价格	High Voltage N-Channel enhancement mode power MOSFET
APT10M11LVFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, M
APT10M11LVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
APT10M11LVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, M
APT10M13JNR	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 100V V(BR)DSS \| 150A I(D)
APT10M15JNR	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 100V V(BR)DSS \| 140A I(D)
APT10M19BVFR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.