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AP512-PCB

更新时间： 2024-02-28 09:29:59
品牌 Logo 应用领域
WJCI 放大器功率放大器
页数 文件大小 规格书
5页 267K
描述
UMTS-band 8W HBT Amplifier Module

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AP512-PCB 技术参数

生命周期：Transferred包装说明：ROHS COMPLIANT, FM-6
Reach Compliance Code：unknown风险等级：5.69
其他特性：HIGH RELIABILITY构造：COMPONENT
增益：26 dB最大输入功率 (CW)：10 dBm
最大工作频率：2170 MHz最小工作频率：2110 MHz
最高工作温度：85 °C最低工作温度：-40 °C
射频/微波设备类型：NARROW BAND HIGH POWERBase Number Matches：1

AP512-PCB 数据手册

 浏览型号AP512-PCB的Datasheet PDF文件第2页浏览型号AP512-PCB的Datasheet PDF文件第3页浏览型号AP512-PCB的Datasheet PDF文件第4页浏览型号AP512-PCB的Datasheet PDF文件第5页 
The Communications Edge TM  
AP512  
UMTS-band 8W HBT Amplifier Module  
Product Information  
Product Features  
Product Description  
Functional Diagram  
The AP512 is a high dynamic range power amplifier in a  
RoHS-compliant flange-mount package. The multi-stage  
amplifier module has 28.5 dB gain, while being able to  
achieve high performance for UMTS-band applications with  
+39 dBm of compressed 1dB power. The module has been  
internally optimized for linearity to provide -55 dBc ALCR  
at 28 dBm power for W-CDMA applications.  
• 2110 – 2170 MHz  
• 28.5 dB Gain  
• -55 dBc ACLR  
@ 28 dBm W-CDMA linear power  
• +39 dBm P1dB  
1
2
3
4
5
6
• +12 V Single Supply  
• Power Down Mode  
Top View  
The AP512 uses a high reliability InGaP/GaAs HBT process  
technology and does not require any external matching  
components. The module operates off of a +12V supply and  
does not requiring any negative biasing voltages; an internal  
active bias allows the amplifier to maintain high linearity  
over temperature. It has the added feature of a +5V power  
down control pin. A low-cost metal housing allows the  
device to have a low thermal resistance and achieves over  
100 years MTTF. All devices are 100% RF and DC tested.  
Pin No.  
1
2 / 4  
3 / 5  
6
Function  
RF Output  
Vcc  
Vpd  
RF Input  
Ground  
• Bias Current Adjustable  
• RoHS-complaint flange-mount pkg  
Case  
Applications  
• Final stage amplifiers for Repeaters  
• Optimized for driver amplifier PA  
mobile infrastructure  
The AP512 is targeted for use as a driver or final stage  
amplifier in wireless infrastructure where high linearity and  
high power is required. This combination makes the device an  
excellent candidate for next generation multi-carrier 3G base  
stations or repeaters using the UMTS frequency band.  
Specifications (1)  
Parameter  
Operational Bandwidth  
Units Min Typ Max Test Conditions  
MHz  
MHz  
dBc  
dB  
2110 – 2170  
2140  
-55  
Test Frequency  
Adjacent Channel Leakage Ratio  
Power Gain  
Input Return Loss  
Output Return Loss  
Output P1dB  
-50  
31  
W-CDMA +28 dBm Total Power, ±5 MHz offset  
Pout = +28 dBm  
26  
28.5  
14  
dB  
dB  
6
dBm  
dBm  
A
+39  
+53  
1.72  
1.69  
+12  
Output IP3  
Pout = +28 dBm/tone, Δf = 1 MHz  
Pout = +28 dBm  
Operating Current (2)  
Quiescent Current, Icq (2)  
Device Voltage, Vcc  
Device Voltage, Vpd (3)  
Ruggedness  
A
V
V
VSWR  
1.55  
10:1  
1.80  
+5  
Pull-down voltage: 0V = “OFF”, 5V=”ON”  
Pout = +39 dBm CW, all phases  
1. Test conditions unless otherwise noted: 25ºC.  
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).  
Absolute Maximum Rating  
Ordering Information  
Parameter  
Rating  
Operating Case Temperature  
Storage Temperature  
-40 to +85 °C  
-55 to +150 °C  
Part No.  
AP512  
Description  
UMTS-band 8W HBT Amplifier Module  
Fully-Assembled Evaluation Board  
RF Input Power (continuous)  
+10 dBm  
WCDMA signal (3GPP Test Model 1+ 32 DPCH)  
AP512-PCB  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
Page 1 of 5 June 2006  
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com  
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