5秒后页面跳转
AP4920GM PDF预览

AP4920GM

更新时间: 2024-10-02 04:02:31
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
6页 81K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4920GM 技术参数

生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (ID):7 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP4920GM 数据手册

 浏览型号AP4920GM的Datasheet PDF文件第2页浏览型号AP4920GM的Datasheet PDF文件第3页浏览型号AP4920GM的Datasheet PDF文件第4页浏览型号AP4920GM的Datasheet PDF文件第5页浏览型号AP4920GM的Datasheet PDF文件第6页 
AP4920GM  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
25V  
25mΩ  
7A  
D2  
D2  
Low On-resistance  
Fast Switching  
D1  
D1  
G2  
S2  
G1  
SO-8  
S1  
Description  
D2  
S2  
D1  
S1  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
G2  
G1  
The SO-8 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
25  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
± 20  
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
7
A
5.7  
20  
A
A
PD@TA=25℃  
Total Power Dissipation  
Linear Derating Factor  
Storage Temperature Range  
Operating Junction Temperature Range  
2
W
0.016  
-55 to 150  
-55 to 150  
W/℃  
TSTG  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-amb  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
200305021  

与AP4920GM相关器件

型号 品牌 获取价格 描述 数据表
AP4920GM-HF A-POWER

获取价格

Simple Drive Requirement, Low On-resistance
AP4920M A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4924GM A-POWER

获取价格

Simple Drive Requirement, Low On-resistance
AP4924M A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4933GM-HF A-POWER

获取价格

Simple Drive Requirement, Low Gate Charge
AP4936GM A-POWER

获取价格

Low Gate Charge, Simple Drive Requirement
AP4936M ADPOW

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP494 ETC

获取价格

VOLTAGE MODE PWM CONTROLLER
AP494IN16 ICT

获取价格

Switching Regulator, Voltage-mode, 0.25A, 200kHz Switching Freq-Max, PDIP16, PLASTIC, DIP-
AP494IN16 ANACHIP

获取价格

Switching Regulator/Controller, Voltage-mode, 0.2A, 200kHz Switching Freq-Max, PDIP16,