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AP4920GM-HF PDF预览

AP4920GM-HF

更新时间: 2024-10-02 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 驱动
页数 文件大小 规格书
6页 108K
描述
Simple Drive Requirement, Low On-resistance

AP4920GM-HF 数据手册

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AP4920GM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
25V  
25mΩ  
7A  
D2  
D2  
D1  
Low On-resistance  
D1  
Fast Switching  
G2  
S2  
RoHS Compliant & Halogen-Free  
G1  
SO-8  
S1  
Description  
D2  
S2  
D1  
S1  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
G2  
G1  
The SO-8 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
25  
Gate-Source Voltage  
+20  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
7
5.7  
A
A
20  
A
PD@TA=25℃  
Total Power Dissipation  
Linear Derating Factor  
Storage Temperature Range  
Operating Junction Temperature Range  
2
W
0.016  
-55 to 150  
-55 to 150  
W/℃  
TSTG  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-amb  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201004212  

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