AP40N03GS

更新时间： 2024-02-10 09:27:50

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	83K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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技术参数
数据手册

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AP40N03GS 技术参数

生命周期：	Contact Manufacturer	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.68	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	40 A
最大漏源导通电阻：	0.017 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	169 A
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

AP40N03GS 数据手册

AP40N03GS

Pb Free Plating Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOS FET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

30V

17mΩ

40A

▼ Simple Drive Requirement

▼ Fast Switching

TO-263

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP40N03GP) is available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

169

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.4

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

2.5

Rthj-a

Data & specifications subject to change without notice

200218032

12 3 4 5 6

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