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AP2152SG-U PDF预览

AP2152SG-U

更新时间: 2024-02-28 12:30:04
品牌 Logo 应用领域
美台 - DIODES 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
17页 495K
描述
Buffer/Inverter Based Peripheral Driver, 2 Driver, 0.5A, PDSO8, GREEN, SOP-8

AP2152SG-U 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.62
驱动器位数:2接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:3端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
输出电流流向:SINK最大输出电流:0.5 A
标称输出峰值电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified子类别:Peripheral Drivers
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

AP2152SG-U 数据手册

 浏览型号AP2152SG-U的Datasheet PDF文件第10页浏览型号AP2152SG-U的Datasheet PDF文件第11页浏览型号AP2152SG-U的Datasheet PDF文件第12页浏览型号AP2152SG-U的Datasheet PDF文件第14页浏览型号AP2152SG-U的Datasheet PDF文件第15页浏览型号AP2152SG-U的Datasheet PDF文件第16页 
AP2142/AP2152  
0.5A DUAL CHANNEL CURRENT-LIMITED POWER  
SWITCH  
Application Note  
Power Supply Considerations  
A 0.01-μF to 0.1-μF X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is  
recommended. Placing a high-value electrolytic capacitor on the input and output pin(s) is recommended  
when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on  
the input. Additionally, bypassing the output with a 0.01-μF to 0.1-μF ceramic capacitor improves the  
immunity of the device to short-circuit transients.  
Over-current and Short Circuit Protection  
An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors,  
sense FETs do not increase the series resistance of the current path. When an overcurrent condition is  
detected, the device maintains a constant output current and reduces the output voltage accordingly.  
Complete shutdown occurs only if the fault stays long enough to activate thermal limiting.  
Three possible overload conditions can occur. In the first condition, the output has been shorted to GND  
before the device is enabled or before VIN has been applied. The AP2142/AP2152 senses the short circuit  
and immediately clamps output current to a certain safe level namely ILIMIT  
.
In the second condition, an output short or an overload occurs while the device is enabled. At the instance  
the overload occurs, higher current may flow for a very short period of time before the current limit function  
can react. After the current limit function has tripped (reached the over-current trip threshold), the device  
switches into current limiting mode and the current is clamped at ILIMIT  
.
In the third condition, the load has been gradually increased beyond the recommended operating current.  
The current is permitted to rise until the current-limit threshold (ITRIG) is reached or until the thermal limit of  
the device is exceeded. The AP2142/AP2152 is capable of delivering current up to the current-limit threshold  
without damaging the device. Once the threshold has been reached, the device switches into its current  
limiting mode and is set at ILIMIT  
.
FLG Response  
When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output  
goes active low after a nominal 7-ms deglitch timeout. The FLG output remains low until both over-current  
and over-temperature conditions are removed. Connecting a heavy capacitive load to the output of the  
device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms  
deglitch timeout. The AP2142/AP2152 is designed to eliminate false over-current reporting without the need  
of external components to remove unwanted pulses.  
Power Dissipation and Junction Temperature  
The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large  
current. Using the maximum operating ambient temperature (TA) and RDS(ON), the power dissipation can be  
calculated by:  
PD = RDS(ON)× I2  
Finally, calculate the junction temperature:  
TJ = PD x RθJA + TA  
Where:  
TA= Ambient temperature °C  
RθJA = Thermal resistance  
PD = Total power dissipation  
AP2142/AP2152 Rev. 2  
13 of 17  
OCTOBER 2008  
www.diodes.com  
© Diodes Incorporated  

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