Datasheet > AMS2302

AMS2302

更新时间： 2025-09-19 11:45:19

品牌	Logo	应用领域
奥地利微 - AMS		/
页数	文件大小	规格书
6页	318K
描述
Exceptional on-resistance and maximum DC current capability

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AMS2302 数据手册

AMS2302

DESCRIPTION

AMS2302

the NꢀChannel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology.This high density process

is especially tailored to minimize onꢀstate resistance.These devices are particularly

suited for low voltage application such as cellular phone and notebook computer

power management, other battery powered circuits, and low inꢀline power loss are

required. The product is in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

SOT-23

ꢀ

20V/3.6A, R_DS(ON)= 70mꢁ

@VGS = 4.5V

20V/3.1A, R_DS(ON)= 95 mꢁ

@VGS = 2.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional onꢀresistance and maximum

DC current capability

SOTꢀ23 package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23

S02YA

Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

AMS2302

SOTꢀ23

S02YA

※ Process Code : A ~ Z ; a ~ z

Advanced Monolithic Systems http://www.ams-semitech.com

12 3 4 5 6

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