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AMMP-6430-TR1G

更新时间： 2024-01-05 21:52:32
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
11页 900K
描述
27-32 GHz 0.5W Power Amplifier in SMT Package

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AMMP-6430-TR1G 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：LCC8,.2SQ,28
Reach Compliance Code：compliantECCN代码：3A001.B.2.D
HTS代码：8542.33.00.01风险等级：5.8
Is Samacsys：N特性阻抗：50 Ω
构造：COMPONENT增益：16 dB
最大输入功率 (CW)：23 dBm安装特点：SURFACE MOUNT
功能数量：1端子数量：8
最大工作频率：34000 MHz最小工作频率：27000 MHz
封装主体材料：PLASTIC/EPOXY封装等效代码：LCC8,.2SQ,28
电源：5 V射频/微波设备类型：WIDE BAND MEDIUM POWER
子类别：RF/Microwave Amplifiers表面贴装：YES
Base Number Matches：1

AMMP-6430-TR1G 数据手册

 浏览型号AMMP-6430-TR1G的Datasheet PDF文件第1页浏览型号AMMP-6430-TR1G的Datasheet PDF文件第3页浏览型号AMMP-6430-TR1G的Datasheet PDF文件第4页浏览型号AMMP-6430-TR1G的Datasheet PDF文件第5页浏览型号AMMP-6430-TR1G的Datasheet PDF文件第6页浏览型号AMMP-6430-TR1G的Datasheet PDF文件第7页 
[1]  
Absolute Maximum Ratings  
[1]  
Symbol  
Parameters  
Units  
V
Value  
6
Notes  
V
d
Positive Supply Voltage  
Gate Supply Voltage  
2
V
g
V
-3 to 0.5  
700  
I
dq  
Drain Current  
mA  
W
P
P
Power Dissipation  
5.5  
2, 3  
2
D
CW Input Power  
dBm  
°C  
23  
in  
T
Maximum Operating Channel Temp.  
Storage Case Temp.  
+155  
-65 to +155  
+260  
4, 5  
ch, max  
T
stg  
°C  
T
max  
Maximum Assembly Temp (20 sec max)  
°C  
Notes:  
1. Operation in excess of any one of these conditions may result in permanent damage to this device.  
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.  
3. When operate at this condition with a base plate temperature of 85 °C, the median time to failure (MTTF) is significantly reduced.  
4. These ratings apply to each individual FET  
5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be  
maintained at the lowest possible levels.  
[6]  
DC Specifications/ Physical Properties  
Symbol  
Parameters and Test Conditions  
Units  
mA  
V
Value  
650  
I
dq  
Drain Supply Current (Vd=5 V, Vg set for Id Typical)  
V
g
Gate Supply Operating Voltage (Id(Q) = 650 (mA))  
-1.1  
[6]  
R
Thermal Resistance (Channel-to-Base Plate)  
°C/W  
°C  
16.8  
θJC  
T
ch  
Channel Temperature  
139.6  
Notes:  
6. Assume SnPb soldering to an evaluation RF board at 85 °C base plate temperatures. Worst case is at saturated output power when DC power  
consumption rises to 5.24W with 0.9W RF power delivered to load. Power dissipation is 4.34W and the temperature rise in the channel is 72.9 °C. In this  
condition, the base plate temperature must be remained below 82.1 °C to maintain maximum operating channel temperature below 155 °C.  
[1, 2, 3, 4]  
AMMP-6430 RF Specifications  
T = 25°C, V = 5.0 V, I =650 mA, V = -1.1V, Z =50Ω  
A
dd  
dq  
g
o
Symbol  
Freq  
Parameters and Test Conditions  
Units  
GHz  
dB  
Minimum  
Typical  
Maximum  
Operational Frequency  
27  
16  
26  
32  
[3, 4]  
Gain  
Small-signal Gain Freq = 27 GHz  
20  
27  
35  
10  
10  
43  
[3]  
P
-1dB  
Output Power at 1dB Gain Compression  
dBm  
dBm  
dB  
OIP3  
Output Third Order Intercept Point  
Input Return Loss  
RL  
in  
RL  
out  
Output Return Loss  
dB  
Isolation  
Reverse Isolation  
dB  
Notes:  
1. Small/Large -signal data measured in packaged form on a 2.4-mm connecter based evaluation board at TA = 25°C.  
2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies  
3. Specifications are derived from measurements in a 50Ω test environment. Aspects of the amplifier performance may be improved over a  
narrower bandwidth by application of additional conjugate, linearity, or power matching.  
4. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=27, 30, and 32GHz  
5. The Gain and P1dB tested at 27GHz guaranteed with measurement accuracy 1.5 dB for gain and 1.6dB for P1dB.  
2
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