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AMMC-5040-W50 PDF预览

AMMC-5040-W50

更新时间: 2024-02-27 20:51:49
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
10页 374K
描述
20-45 GHz GaAs Amplifier

AMMC-5040-W50 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.13特性阻抗:50 Ω
构造:COMPONENT增益:20 dB
最大输入功率 (CW):21 dBm最大工作频率:45000 MHz
最小工作频率:20000 MHz射频/微波设备类型:WIDE BAND MEDIUM POWER
Base Number Matches:1

AMMC-5040-W50 数据手册

 浏览型号AMMC-5040-W50的Datasheet PDF文件第1页浏览型号AMMC-5040-W50的Datasheet PDF文件第3页浏览型号AMMC-5040-W50的Datasheet PDF文件第4页浏览型号AMMC-5040-W50的Datasheet PDF文件第5页浏览型号AMMC-5040-W50的Datasheet PDF文件第6页浏览型号AMMC-5040-W50的Datasheet PDF文件第7页 
AMMC-5040 DC Specifications/Physical Properties[1]  
Symbol  
Parameters and Test Conditions  
Units  
Min.  
Typ.  
Max.  
VD±,2-3-4  
ID±  
Drain Supply Operating Voltage  
V
2
4.5  
5
First Stage Drain Supply Current (VDD = 4.5 V, V= -0.5 V)  
Total Drain Supply Current for Stages 2, 3 and 4 (VDD = 4.5 V, VGG= -0.5 V)  
Gate Supply Operating Voltages (IDD = 300 mA)  
Pinch-off Voltage (VDD = 4.5 V, IDD < ±0 mA)  
mA  
mA  
V
50  
ID2-3-4  
VG±,2-3-4  
VP  
225  
-0.45  
-±.5  
49  
V
θch-b  
Notes:  
Thermal Resistance[2] (Backside Temp. Tb = 25°C)  
°C/W  
±. Measured in wafer form with Tchuck = 25°C (except θch-bs.)  
2. Channel-to-backside Thermal Resistance (θch-b) = 58°C/W at Tchannel (Tc) = ±50°C as measured using the liquid crystal method. Thermal Resistance  
at backside temperature (Tb) = 25°C calculated from measured data.  
RF Specifications[3,4] (VDD = 4.5V, IDD (Q)= 300 mA, Z0 = 50Ω)  
Units  
GHz  
Broadband  
ꢀ3– 40  
Narrow Band Typical Performance  
ꢀ1–ꢀ4  
ꢀ7–ꢀ9  
Typical  
37–40  
40–45  
Symbol  
Parameters and Test Conditions  
Min.  
Typ.  
2
|S2±  
|
Small-signal Gain  
dB  
20  
25  
25.5  
±0.2  
±7  
25  
22.4  
±0.2  
2±  
2±.3  
±±.2  
±7  
2
|S2±  
|
Small-signal Gain Flatness  
Input Return Loss  
dB  
±±.5  
±7  
±0.4  
±8  
RLin  
dB  
±5  
8
RLout  
P-±dB  
Output Return Loss  
dB  
±±  
±0  
±4  
±3  
±3  
Output Power @ ± dB Gain Compression  
f = 22 GHz  
dBm  
±9.5  
20  
22.5  
2±  
20  
P-3dB  
Output Power @ 3 dB Gain Compression, f = 22 GHz dBm  
2±  
30  
2±.6  
29  
23.5  
29  
22.5  
3±  
2±.5  
27  
OIP3  
Output 3rd Order Intercept Point,  
dBm  
f = 2 MHz, Pin = -8 dBm, f = 22 GHz  
2
|S±2  
|
Isolation  
dB  
40  
55  
55  
55  
55  
55  
Notes:  
3. Data measured in wafer form, Tchuck = 25°C.  
4. ±00% on-wafer RF test is done at frequency = 24, 27, 29, 37 and 40 GHz, except as noted.  

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