AMMC-5040 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
VD±,2-3-4
ID±
Drain Supply Operating Voltage
V
2
4.5
5
First Stage Drain Supply Current (VDD = 4.5 V, VG± = -0.5 V)
Total Drain Supply Current for Stages 2, 3 and 4 (VDD = 4.5 V, VGG= -0.5 V)
Gate Supply Operating Voltages (IDD = 300 mA)
Pinch-off Voltage (VDD = 4.5 V, IDD < ±0 mA)
mA
mA
V
50
ID2-3-4
VG±,2-3-4
VP
225
-0.45
-±.5
49
V
θch-b
Notes:
Thermal Resistance[2] (Backside Temp. Tb = 25°C)
°C/W
±. Measured in wafer form with Tchuck = 25°C (except θch-bs.)
2. Channel-to-backside Thermal Resistance (θch-b) = 58°C/W at Tchannel (Tc) = ±50°C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (Tb) = 25°C calculated from measured data.
RF Specifications[3,4] (VDD = 4.5V, IDD (Q)= 300 mA, Z0 = 50Ω)
Units
GHz
Broadband
ꢀ3– 40
Narrow Band Typical Performance
ꢀ1–ꢀ4
ꢀ7–ꢀ9
Typical
37–40
40–45
Symbol
Parameters and Test Conditions
Min.
Typ.
2
|S2±
|
Small-signal Gain
dB
20
25
25.5
±0.2
±7
25
22.4
±0.2
2±
2±.3
±±.2
±7
2
∆|S2±
|
Small-signal Gain Flatness
Input Return Loss
dB
±±.5
±7
±0.4
±8
RLin
dB
±5
8
RLout
P-±dB
Output Return Loss
dB
±±
±0
±4
±3
±3
Output Power @ ± dB Gain Compression
f = 22 GHz
dBm
±9.5
20
22.5
2±
20
P-3dB
Output Power @ 3 dB Gain Compression, f = 22 GHz dBm
2±
30
2±.6
29
23.5
29
22.5
3±
2±.5
27
OIP3
Output 3rd Order Intercept Point,
dBm
∆f = 2 MHz, Pin = -8 dBm, f = 22 GHz
2
|S±2
|
Isolation
dB
40
55
55
55
55
55
Notes:
3. Data measured in wafer form, Tchuck = 25°C.
4. ±00% on-wafer RF test is done at frequency = 24, 27, 29, 37 and 40 GHz, except as noted.
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