5秒后页面跳转
AMIS30663NGA PDF预览

AMIS30663NGA

更新时间: 2024-01-26 15:00:38
品牌 Logo 应用领域
AMI 电信集成电路光电二极管
页数 文件大小 规格书
12页 216K
描述
High Speed CAN Transceiver

AMIS30663NGA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8Reach Compliance Code:unknown
风险等级:5.79JESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9276 mm
湿度敏感等级:3功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.7272 mm
标称供电电压:5 V表面贴装:YES
电信集成电路类型:INTERFACE CIRCUIT温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.937 mm
Base Number Matches:1

AMIS30663NGA 数据手册

 浏览型号AMIS30663NGA的Datasheet PDF文件第4页浏览型号AMIS30663NGA的Datasheet PDF文件第5页浏览型号AMIS30663NGA的Datasheet PDF文件第6页浏览型号AMIS30663NGA的Datasheet PDF文件第8页浏览型号AMIS30663NGA的Datasheet PDF文件第9页浏览型号AMIS30663NGA的Datasheet PDF文件第10页 
Data Sheet  
AMIS-30663  
High Speed CAN Transceiver  
Table 6: Characteristics, Cont.  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
170  
Max.  
Unit  
Bus Lines (pins CANH and CANL)  
µA  
LI(CANL)  
I
CC  
CANL  
V = 0V; V = 5V  
Input leakage current at pin CANL  
Common-mode peak during transition from dom rec or  
rec dom  
10  
250  
500  
CM-peak  
V
See Figure 8 and 9  
See Figure 8 and 9  
-500  
mV  
Difference in common-mode between dominant and recessive  
state  
CM-step  
V
-150  
150  
mV  
Power-on-Reset  
PORL  
ref  
CANH, CANL, V in tri-state below  
POR level  
POR level  
2.2  
3.5  
4.7  
V
Thermal Shutdown  
j(sd)  
T
Shutdown junction temperature  
150  
160  
180  
°C  
Timing Characteristics (see Figure 6 and 7)  
d(TxD-BUSon)  
t
t
t
t
t
t
t
Delay TxD to bus active  
Delay TxD to bus inactive  
Delay bus active to RxD  
Delay bus inactive to RxD  
Propagation delay TxD to RxD from recessive to dominant  
Propagation delay TxD to RxD from dominant to recessive  
TxD dominant time for time out  
40  
30  
25  
85  
60  
55  
110  
110  
110  
135  
230  
245  
750  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
d(TxD-BUSoff)  
d(BUSon-RxD)  
d(BUSoff-RxD)  
pd(rec-dom)  
d(dom-rec)  
65  
100  
100  
100  
250  
dom(TxD)  
TxD  
V
= 0V  
450  
Notes  
1) Not tested on ATE.  
33  
Table 7: Digital Output Characteristics @ V = 2.5V  
Symbol  
Parameter  
Conditions  
Min.  
-2.6  
Typ.  
Max.  
4
Unit  
Receiver Data Output (pin RxD)  
oh  
I
OH  
V
33  
> 0.9 x V  
HIGH-level output current  
LOW-level output current  
mA  
mA  
ol  
I
OL  
V
33  
< 0.1 x V  
CC  
V
33  
junc  
LT  
= 4.75 to 5.25V; V = 2.5V 5%; T = -40 to +150 °C; R =60Ω  
unless specified otherwise.  
8.5 Measurement Set-ups and Definitions  
+3.3 V  
+5 V  
100 nF  
VCC  
V33  
100 nF  
3
8
CANH  
7
TxD  
RxD  
1
1 nF  
VREF  
AMIS-  
30663  
Transient  
Generator  
5
1 nF  
4
6
CANL  
2
PC20040918.9  
20 pF  
GND  
Figure 4: Test Circuit for Automotive Transients  
AMI Semiconductor - Rev. 1.4, Oct. 04  
www.amis.com  
7

与AMIS30663NGA相关器件

型号 品牌 描述 获取价格 数据表
AMIS-30663NGA ONSEMI IC DATACOM, INTERFACE CIRCUIT, PDSO8, 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8, Networ

获取价格

AMIS-39100 AMI Octal High Side Driver with Protection

获取价格

AMIS-39100 ONSEMI Octal High Side Driver with Protection

获取价格

AMIS39100AGA AMI Octal High Side Driver with Protection

获取价格

AMIS39100PNPB3RG ONSEMI Octal High Side Driver with Protection

获取价格

AMIS-39101 ONSEMI Octal High Side Driver with Protection

获取价格