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AMIS-40615 PDF预览

AMIS-40615

更新时间： 2022-04-23 23:00:11
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17页 716K
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LIN Transceiver with 3.3V Voltage Regulator

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AMIS-40615 数据手册

 浏览型号AMIS-40615的Datasheet PDF文件第7页浏览型号AMIS-40615的Datasheet PDF文件第8页浏览型号AMIS-40615的Datasheet PDF文件第9页浏览型号AMIS-40615的Datasheet PDF文件第11页浏览型号AMIS-40615的Datasheet PDF文件第12页浏览型号AMIS-40615的Datasheet PDF文件第13页 
AMIS-40615  
LIN Transceiver with 3.3V Voltage Regulator  
Data Sheet  
Table 7: DC Characteristics LIN Transmitter  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Pin LIN  
VLin_dom_LoSup  
VLin_dom_HiSup  
VLin_rec  
ILIN_lim  
Rslave  
ILIN_off_dom  
ILIN_off_rec  
ILIN_no_GND  
ILIN_no_Vbb  
LIN dominant output voltage  
LIN dominant output voltage  
LIN recessive output voltage  
Short circuit current limitation  
Internal pull-up resistance  
LIN output current bus in dominant state  
LIN output current bus in recessive state  
Communication not affected  
LIN bus remains operational  
TXD = low; Vbb = 7.3V  
TXD = low; Vbb = 18V  
TXD = high; Ilin = 0mA  
VLin = Vbb_max  
1.2  
2.0  
V
V
V
mA  
kΩ  
mA  
µA  
mA  
µA  
Vbb - Vγ (1)  
40  
20  
-1  
130  
47  
33  
Driver off; Vbb = 12V  
Driver off; Vbb = 12V  
Vbb = GND = 12V; 0 < VLin < 18V  
Vbb = GND = 0V; 0 < VLin < 18V  
20  
1
100  
-1  
Note:  
1.  
Vγ is the forward diode voltage. Typically (over the complete temperature) Vγ = 1V.  
Table 8: DC Characteristics LIN Receiver  
Symbol  
Pin LIN  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Vrec_dom  
Vrec_rec  
Vrec_cnt  
Vrec_hys  
Receiver threshold  
Receiver threshold  
Receiver center voltage  
Receiver hysteresis  
LIN bus recessive → dominant  
LIN bus dominant → recessive  
(Vbus_dom + Vbus_rec) / 2  
0.4  
0.4  
0.475  
0.05  
0.6  
0.6  
0.525  
0.175  
Vbb  
Vbb  
Vbb  
Vbb  
Table 9: DC Characteristics I/Os  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Pin WAKE  
V_wake_th  
I_leak  
T_wake_min  
Pins TxD and STB  
Vil  
Threshold voltage  
0.35  
-1  
8
0.65  
1
54  
Vbb  
µA  
µs  
Input leakage current (1)  
Debounce time  
Vwake = 0V; Vbb = 18V  
Sleep mode; rising and falling edge  
-0.5  
Low level input voltage  
High level input voltage  
Pull-up resistance to Vcc (1)  
0.8  
V
V
kΩ  
Vih  
Rpu  
2.0  
50  
200  
Pin INH  
Delta_VH  
I_leak  
High level voltage drop  
Leakage current  
IINH = 15mA  
Sleep mode; VINH = 0V  
0.35  
0.75  
1
V
µA  
-1  
Pin EN  
Vil  
Vih  
Rpd  
Pin RxD  
Vol  
Low level input voltage  
0.8  
200  
0.65  
V
V
kΩ  
High level input voltage  
2.0  
50  
Pull-down resistance to ground (1)  
Low level output voltage  
High level output voltage  
Isink = 2mA  
Isource = -2mA  
V
V
Voh  
Vcc - 0.65V  
Note:  
1.  
By one of the trimming bits, following reconfiguration can be done during chip-level testing in order to fit the AMIS-40615 into different interface: pins TxD and EN  
will have typ. 10kΩ pull-down resistor to ground and pin WAKE will have typ. 10µA pull-up current source.  
Table 10: DC Characteristics  
Symbol  
POR  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
PORH_Vbb  
PORL_Vbb  
POR_Vbb_hyst  
POR_Vbb_sl  
PORH_Vcc  
PORL_Vcc  
POR_Vcc_hyst  
TSD  
POR high level Vbb comparator  
POR low level Vbb comparator  
Hysteresis of POR level Vbb comparator  
Maximum slope on Vbb to guarantee POR  
POR high level Vcc comparator  
4.5  
V
V
mV  
V/ms  
V
3
100  
50  
3
POR low level Vcc comparator  
Hysteresis of POR level Vcc comparator  
2
100  
V
mV  
Tj  
Tj_hyst  
Junction temperature  
Thermal shutdown hysteresis  
For shutdown  
165  
9
195  
18  
°C  
°C  
AMI Semiconductor – March 2007, M-20544-001  
10  
www.amis.com  
 
 
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