是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | LFBGA, BGA93,10X12,32 |
针数: | 93 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.19 |
Is Samacsys: | N | 最长访问时间: | 70 ns |
其他特性: | STATIC RAM IS ORGANISED AS 1M X 16 | JESD-30 代码: | R-PBGA-B93 |
JESD-609代码: | e0 | 长度: | 11.6 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 混合内存类型: | FLASH+SRAM |
功能数量: | 1 | 端子数量: | 93 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 4MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFBGA |
封装等效代码: | BGA93,10X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | 240 |
电源: | 1.8 V | 认证状态: | Not Qualified |
座面最大高度: | 1.4 mm | 最大待机电流: | 0.000008 A |
子类别: | Other Memory ICs | 最大压摆率: | 0.025 mA |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.65 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AM42BDS640AGTD9FS | SPANSION | Memory Circuit, 4MX16, CMOS, PBGA93, 8 X 11.60 MM, FBGA-93 |
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AM42BDS640AGTD9FT | SPANSION | Memory Circuit, 4MX16, CMOS, PBGA93, 8 X 11.60 MM, FBGA-93 |
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AM42BDS640AGTD9IS | SPANSION | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
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AM42BDS640AGTD9IS | AMD | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Mem |
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AM42BDS640AGTD9IT | AMD | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Mem |
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AM42BDS640AGTD9IT | SPANSION | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
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